Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors

Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors

“…The GaInP/GaAs HBT layers were grown by CBE using reduced toxicity precursors such as TBA and TBP. The details of the growth technique and material characteristics were described by the authors [9], [17]. The composite emitter HBT design consists of a compositionally graded 5 10 cm , 380 Å thick AlGaAs ( 0.22) layer followed by undoped 100 Å thick GaInP, which serves in reducing the spike created in the conduction band of the AlGaAs-GaInP heterointerface.…”

“…Monolithic broadband GaInP/GaAs HBT transimpedance amplifiers having a bandwidth (BW) of 19 GHz have been demonstrated by the authors and their large signal, as well as, a high gain performance have been reported [6], [7]. Excellent microwave performance of 140~GHz and GHz has been achieved using GaInP/GaAs HBTs [8], and chemical beam epitaxy (CBE) using TBA/TBP precursors has been reported for growth of GaInP/GaAs devices [9]. High-speed microwave performance of GaInP/GaAs HBTs can be achieved using various designs such as tunneling emitter [10], strained InGaAs base [11], and collector undercut [12].…”