Growth conditions of metal-catalyzed, laterally grown Ge films on Si

Wang, Weizhen; Quitoriano, Nathaniel J.

doi:10.1016/j.tsf.2020.138133

Cited by 2 publications

(1 citation statement)

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“…This Au island is relatively large (and hence has a broader Au peak) and the InP film can be found on the leftpart of the Au island. This mechanism has also been observed in the metal-catalyzed lateral growth of Ge on Si grown by CVD where the Ge film solidified on one side of the Au catalyst [25].…”

Section: Figures 1(g) and (H) Show Plan-view Sem Micrographs At 20 Kv...mentioning

confidence: 57%

Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Suwito,

Haffouz,

Dalacu

et al. 2024

J. Phys. D: Appl. Phys.

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We reported nucleation mechanisms of InP directly on Si (8% lattice mismatch) under confined structures, called micro-crucibles, at ultra-high vacuum (UHV) by chemical beam epitaxy (CBE). These micro-crucibles are used to induce lateral growth in the presence of a micro-scale Au catalyst. It is found that at this UHV condition, the kinetics is dictated predominantly by adatom surface diffusion. Using a two-step growth process ((1) In-only exposure, then, (2) simultaneous In and P exposures), InP islands have been successfully nucleated on Si substrates under micro-crucible structures. The nucleation of these InP islands strongly depends on the metal catalyst location relative to the micro-crucible opening with metal catalysts residing closer to the opening having a higher chance to get incorporated with In and P atoms. Importantly, we found that using smaller micro-crucibles with double openings can increase the possibility of having metal catalysts reside near either opening and nucleate InP under micro-crucibles.

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Section: Figures 1(g) and (H) Show Plan-view Sem Micrographs At 20 Kv...mentioning

confidence: 57%