Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

Mizerov, A. M.; Jmerik, V. N.; Kaibyshev, V. Kh.; Komissarova, T. A.; Masalov, S. A.; Ситникова, A. А.; Иванов, С. В.

doi:10.12693/aphyspola.114.1253

Cited by 2 publications

(1 citation statement)

References 15 publications

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“…For this purpose the GaN (AlN) layers were grown on c-Al 2 O 3 substrates at gradually increasing Ga (Al) flux and constant values of T S = 700 °C and F N* = 0.5ML/s until the growth rate reached the saturation [7].…”

Section: Resultsmentioning

confidence: 99%

Growth kinetics of Al_xGa_1–xN layers (0 < x < 1) in plasma‐assisted molecular beam epitaxy

Mizerov

Jmerik

Kop’ev

et al. 2010

Phys. Status Solidi (c)

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Comparative study of growth kinetics of the AlxGa1‐xN (x = 0‐1) layers of different polarity, grown by plasma assisted molecular beam epitaxy (PA MBE) under different growth conditions (substrate temperature, group III to activated nitrogen and Al to Ga flux ratios) and on different buffer layers, is presented. The 60 °C higher temperature stability of N‐face AlGaN layers is detected. The strong influence of elastic stress on growth kinetics of metal‐polar AlxGa1‐xN (x > 0.2) layers is observed and discussed. It was found that two‐dimensional growth of AlGaN films of the same composition on different buffer layers at TS = 700 °C can be achieved at different group III surface enrichment, the AlGaN(0001)/c‐Al2O3 films exhibiting the atomically smooth surface at group III to activated nitrogen flux ratio FIII/FN *gradually increased from 1.3 to 2 with the x variation from 0.1 to 0.8. In this case the alloy composition is controlled by the variation of Al flux only (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Growth kinetics of Al_xGa_1–xN layers (0 < x < 1) in plasma‐assisted molecular beam epitaxy

Mizerov

Jmerik

Kop’ev

et al. 2010

Phys. Status Solidi (c)

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Disorder and its impact on mobility of undoped GaN

Makin,

Messecar,

Durbin

2024

Applied Physics Letters

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While it is widely appreciated that disorder is intricately related to observed sample-to-sample variation in property values, outside of very specialized cases, analysis is often qualitative in nature. One well-understood quantitative approach is based on the 1930s work of Bragg and Williams, who established an order parameter S, which ranges from unity in the case of a perfectly ordered structure to zero in the case of a completely randomized lattice. Here, we demonstrate that this order parameter is directly related to charge carrier mobility in undoped GaN. Extrapolating experimental points yields a value of 1640 cm2/Vs for the maximum room temperature mobility in stoichiometric material, with higher values potentially accessible for Ga-rich material. Additionally, we present a model for observed trends in carrier concentration based on the occurrence of distinct structural motifs, which underpin S. The result is an alternative perspective for the interplay between lattice structure and charge carriers that enables a predictive model for tuning mobility and carrier concentration in undoped material.

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Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

Cited by 2 publications

References 15 publications

Growth kinetics of Al_xGa_1–xN layers (0 < x < 1) in plasma‐assisted molecular beam epitaxy

Growth kinetics of Al_xGa_1–xN layers (0 < x < 1) in plasma‐assisted molecular beam epitaxy

Disorder and its impact on mobility of undoped GaN

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Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

Cited by 2 publications

References 15 publications

Growth kinetics of AlxGa1–xN layers (0 < x < 1) in plasma‐assisted molecular beam epitaxy

Growth kinetics of AlxGa1–xN layers (0 < x < 1) in plasma‐assisted molecular beam epitaxy

Disorder and its impact on mobility of undoped GaN

Contact Info

Product

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About

Growth kinetics of Al_xGa_1–xN layers (0 < x < 1) in plasma‐assisted molecular beam epitaxy

Growth kinetics of Al_xGa_1–xN layers (0 < x < 1) in plasma‐assisted molecular beam epitaxy