Growth, dispersion, and electronic devices of nitrogen‐doped single‐wall carbon nanotubes

Abstract

Phone: þ44 161 275 0136, Fax: þ44 161 275 4527This paper describes the complete processes from growth to electronic devices of nitrogen-doped single-wall carbon nanotubes (N-SWCNTs). The N-SWCNTs were synthesized using a floating catalyst chemical vapor deposition method. The drydeposited N-SWCNT films were dispersed in N-methylpyrolidone followed by sonication and centrifugation steps to yield a stable dispersion of N-SWCNTs in solution. The length and diameter distribution as well as concentration of N-SWCNTs in solution were measured by atomic force microscopy and optical absorption spectroscopy, respectively. The N-SWCNTs were then assembled into electronic devices using bottom-up dielectrophoresis and characterized as fieldeffect transistors. Finally, the potential for application of N-SWCNTs in sensors is discussed.The three stages of N-doped SWCNT processing: (a) growth and collection on filter, (b) dispersion in NMP, and (c) dielectrophoretic assembly into transistor device.

One-dimensional nitrogen-containing carbon nanostructures

“…Triple-walled NCNTs were prepared by encapsulation and pyrolysis of Fe(II) phthalocyanine in the interior space of double-walled CNTs [349]. A new approach to synthesize SWNCNTs using a gas phase floating catalyst CVD method where carbon monoxide acts as carbon source, NH 3 as the nitrogen source and etching agent, and iron particles derived from ferrocene [350,351] or from iron vapor evaporated from a resistively heated iron wire [352,353] as the catalyst, was recently presented. The NCNT bouquets have been synthesized by the pyrolysis of nitrogen-containing ion-exchange resin [354].…”

Bottom-up assembly of nano-carbon devices by dielectrophoresis

“…Recently, nitrogen‐doped (N‐) SWCNTs were produced in a continuous flow CVD reactor. These N‐SWCNTs were dispersed in N‐methyl‐2‐pyrolidone (NMP) and deposited into single‐SWCNT devices by DEP . In this, and previous experiments, it was established that the DEP process does not introduce any defects or otherwise damage the SWCNTs during deposition, despite the high local electric field strengths applied.…”

Characterization and Electrical Properties of PVA Films with Self-Assembled Chitosan-AuNPs/SWCNT-COOH Nanostructures

“…This shift is caused by the structural arrangement of polymers-nanostructures, electrostatic interaction of chitosan-AuNPs/SWCNT-COOH and individual band gap values of each material. Besides, the structure of SWCNT-COOH has the lowest values ranging from 0.39 to 1.26 eV [ 43 ] and the band gap energy changes according to the structure, diameter and doping [ 44 ]. The bang gap energy values obtained of chitosan-AuNPs/SWCNT-COOH films are higher than SWCNT-COOH.…”