Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material in a controlled manner to quantify the relative effects of the impurity content on grain boundary structure and thin film nucleation. Atomic force microscopy (AFM) has been employed to directly characterize films grown using 0.0-7.5% PnQ by weight in the source material. Analysis of the distribution of capture zones areas of submonolayer islands as a function of impurity content shows that for large PnQ content the critical nucleus size for forming a Pn island is smaller than for low PnQ content. This result indicates a favorable energy for formation of Pn-PnQ complexes, which in turn suggests that the primary effect of PnQ on Pn mobility may arise from homogeneous distribution of PnQ defects.Pac Numbers: 68.65.-k, 05.10.Gg, 73.63.-b, 68.35.bm, 68.55.-a Published as PRB 77, 205328 (2008) The study of organic materials, particularly the various roles of morphology and impurity doping, remains an active subject for device physics, materials design, and applied statistical mechanics.1-3 Studies of the most promising organic electronic semiconductor, pentacene (Pn), have shown that its transport properties are sensitively dependent on crystalline quality 4, 5 and thin film preparation: for the work here, observations that low concentrations of impurities significantly affect film nucleation and growth, electronic transport, and electronic signal noise are of particular interest [6][7][8][9] . Extensive studies of the initial stages of pentacene film growth 3, 10-15 have shown that it follows the classical picture of nucleation, island growth, aggregation and coalescence that was developed for the growth of inorganic films. [16][17][18][19][20] In later stages of growth, the two-dimensional domains formed from island coalescence serve as the basis for three-dimensional growth due to an Ehrlich-Schwoebel energy barrier that slows diffusion from higher to lower layers of the film 5,7,21 . Scaling analysis has proven powerful for evaluating island nucleation and grain boundary formation in such growth systems. 17,19,20,22 In particular, recent investigations using the Wigner surmise, which relates growth processes to To prepare materials with lower impurity content, source material was heated to a temperature slightly lower than its sublimation temperature for at least one hour prior to the thin film deposition. Previous measurements have shown that this treatment reduces the absolute source PnQ number fraction to less than 0.001 7 , and yields sample mobilities as high as those obtained withPn purified using gradient-sublimed material. The source concentration values used to quantify our results are the added number fraction plus the natural impurity level. This represents a readily reproducible quantity, but will not represent the absolute concentration in the thin film, due to the larger sublimation rate of PnQ than Pn at any given source temperature. Two film thicknesses were grown, submonolayer and 50 nm thick, with two diffe...