Growth feature of layered self-standing diamond films by DC arc plasma jet CVD

Chen, G.C.; Liu, Hao; Li, B.; Dai, Fulong; Askari, Syed Jawid; Song, Jian; Hei, L.F.; Tang, Wenting; Lu, Fan Xiu

doi:10.1016/j.jcrysgro.2007.08.033

Cited by 6 publications

(2 citation statements)

References 29 publications

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“…1b. Under our growth condition, the diamond growth rate is normally larger than 10 µm/h [23]. Thus, the thickness of the deposit is larger than 1 µm in Samples A, B and C. Therefore, the thin zone does not contain the substrate, but the grown deposit.…”

Section: Resultsmentioning

confidence: 95%

Study of Nucleation of CVD Diamond by DC Arcjet Method

Wang

Zhang

et al. 2014

AMR

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Arcjet plasma enhanced CVD was used to grow diamond. Nucleation of diamond was studied at the early stage of growth cause. The micro-structural probes (transmission electron microscope (TEM), high resolution electronic microscope (HREM), selected area diffraction (SAD) and electron energy loss spectra (EELS) were used to characterize the nuclei. It was found that nuclei formed following the amorphous carbon formation. The critical nucleus size was deduced to be less than 20 nm. The growth of nucleus would form the network-like structure. The incubation period of nucleation was deduced as 6–8min under the condition of high concentration of CH4 in H2.

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Section: Resultsmentioning

confidence: 95%

Study of Nucleation of CVD Diamond by DC Arcjet Method

Wang

Zhang

et al. 2014

AMR

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“…It is very suitable for use some industrial applications as semiconductor, microwave optical window, machining tools [5][6]. Deposited diamond films were usually flat and wafer [7][8][9], but diamond convex film was hardly reported. Now, the studies of diamond convex film prepared by only hot filament CVD and microwave plasma CVD, but DC arc plasma CVD was not observed [10].…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline Columnar Diamond Film Deposited on Spherical Substrate by DC Arc Plasma CVD

Zuo

et al. 2008

KEM

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Diamond film was deposited on spherical molybdenum substrate by DC arc plasma CVD method. Diamond film morphology, purities and orientation evolution, obtained from atomic force microscopy, scanning electron microscopy, Raman spectroscopy, X ray diffraction respectively, has showed that grains on the growth surface are compact, continuous and uniform. Characteristic diamond (111), (220), (311) peaks were found and (111) facets were predominant. It revealed that diamond film was polycrystalline texture characteristic. There is a typical diamond Raman spectrum peaks at 1332.0 cm-1, and not graphite and amorphous carbon characteristic peak. High purity diamond film was deposited. When methane concentration was increased, diamond film has more local clusters and vacancy defects such as voids, graphite inclusion, and hydrogen cluster. Therefore, some important parameters such as methane concentration and substrate temperature should be optimized in depositing diamond film.

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In situ observation of nucleation by optical emission spectra in CVD diamond

Chen

et al. 2010

Diamond and Related Materials

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Growth feature of layered self-standing diamond films by DC arc plasma jet CVD

Cited by 6 publications

References 29 publications

Study of Nucleation of CVD Diamond by DC Arcjet Method

Study of Nucleation of CVD Diamond by DC Arcjet Method

Polycrystalline Columnar Diamond Film Deposited on Spherical Substrate by DC Arc Plasma CVD

In situ observation of nucleation by optical emission spectra in CVD diamond

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