Growth kinetics and some properties of thick LPE YIG layers

Tomáš

J. Phys. D: Appl. Phys.

2002

The temperature dependences of domain wall pinning field and of anisotropy field in magnetic garnets and amorphous ribbons are reviewed and compared on the basis of our own experiments and data taken from the literature. The results are discussed in the frame of a modified classical model of the domain wall coercive field of magnetic materials with a stationary distribution of magnetic defects. It is shown that - independently of the substantial difference between the two investigated types of materials - the temperature dependence of the domain wall pinning field is predominantly determined by the temperature dependence of the anisotropy field and only modified by the defects shape and distribution. This result shows that from the two major sources of the coercive properties - the magnetic parameters and the material structural characteristics - the temperature dependence of coercivity is determined mainly by the former one. The experimental results made it also possible to get a quantitative insight into the temperature dependence of the efficiency function\it of these materials, which describe the interaction between the moving domain wall and the defects.

Section: Epitaxial Garnet Filmsmentioning

confidence: 99%

On the temperature dependence of domain wall pinning field in soft, uniaxial magnetic materials

Tomáš

J. Phys. D: Appl. Phys.

2002

“…While formerly only micrometer thick films were used which can be obtained by liquid phase epitaxy with very high quality [39][40][41][42] ultrathin films are nowadays mostly fabricated by pulsed laser deposition (PLD) of epitaxial films at elevated temperature. Especially for ultra thin films (20 nm or less) grown by PLD quality is high but limited and best results so far show a linewidth in FMR of 2.1 Oe at 9.6 GHz.…”

Section: Introductionmentioning

confidence: 99%

“…The new fields of applications have resulted in a growing need of high quality thin films, for example for integrated magnonics where layers need to be as thin as 100 nm or even less. While formerly only micrometer thick films were used which can be obtained by liquid phase epitaxy with very high quality 40 41 42 43 ultrathin films are nowadays mostly fabricated by pulsed laser deposition (PLD) of epitaxial films at elevated temperature. Especially for ultra thin films (20 nm or less) grown by PLD quality is high but limited and best results so far show a linewidth in FMR of 2.1 Oe at 9.6 GHz 1 .…”

mentioning

confidence: 99%

Yttrium Iron Garnet Thin Films with Very Low Damping Obtained by Recrystallization of Amorphous Material

Hauser

Richter

Homonnay

et al. 2016

Sci Rep

211

112

We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic. In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of α = (6.15 ± 1.50) · 10−5 is found and the linewidth at 9.6 GHz is as small as 1.30 ± 0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of α = (7.35 ± 1.40) · 10−5 is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49 ± 0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.

“…Results of measurements are presented, which were performed on a thin magnetic garnet film with the nominal composition (YSmCa) 3 (FeGe) 5 O 12 and thickness h = 5.3 µm. The film was grown by liquid phase epitaxy on (111)-oriented gadolinium gallium garnet substrate (GGG) from the traditional PbO-B 2 O 3 melt-solution system [5].…”

Section: Resultsmentioning

confidence: 99%

“…The film was grown by liquid phase epitaxy on (111)-oriented gadolinium gallium garnet substrate (GGG) from the traditional PbO-B 2 O 3 melt-solution system [5]. This film has no compensation temperature.…”

Section: Resultsmentioning

confidence: 99%

Coercive properties of epitaxial magnetic garnet films after heat treatment in reducing atmosphere

Tomáš

2004

phys. stat. sol. (c)

The domain wall pinning field of epitaxial magnetic rare earth garnet film was modified in certain temperature range by annealing in a reducing atmosphere at temperature as low as 600 °C. The result is analyzed on the assumption of existence of two mutually independent wall-pinning sets of material defects. The heat treatment had no influence on the anisotropy of the sample and on the characteristic periods of the defect distributions in any of the sets, while at the certain temperature range (between 100 and 300 K) the pinning strength of the defects in one set was increased. The result supports the assumed model of coercivity and shows that by an appropriate processing of the sample some of the wall-pinning sets can be modified independently on the others.