Growth kinetics study in halide chemical vapor deposition of SiC

Nigam, Saurav; Chung, Hun Jae; Polyakov, A. Y.; Fanton, Mark A.; Weiland, B.; Snyder, David W.; Skowroński, Marek

doi:10.1016/j.jcrysgro.2005.06.027

Cited by 29 publications

(52 citation statements)

References 26 publications

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“…[10,11] The use of chlorinated precursors is so promising that is under investigation also for bulk growth via high temperature (HT) CVD. [12] These processes demonstrate a significant increase in the growth rate value while keeping high-quality, mirrorlike surfaces. It is then interesting to analyze the limits of these processes to increase the industrial profitability of the reactors, and of the whole deposition process.…”

Section: Introductionmentioning

confidence: 99%

Gas‐Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine‐Containing Species

Veneroni

Masi

2006

Chemical Vapor Deposition

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A detailed chemical mechanism for the silicon carbide epitaxial growth using light hydrocarbons, silane, and either chlorosilanes and/or HCl as the chlorine source is presented. The mechanism involves 153 gas-phase and 76 surface reactions among 47 gas-phase and 9 surface species, respectively. A comparison with the performances of the standard process using silane-hydrocarbons is presented, and the observed growth rate increase and the disappearing of the homogeneous silicon droplets in gas phase is explained.

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Section: Introductionmentioning

confidence: 99%

Gas‐Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine‐Containing Species

Veneroni

Masi

2006

Chemical Vapor Deposition

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“…They also showed that, for Al doping, an increase of the flow rate of C 3 H 8 leads to an increase of dopant incorporation. However, in their experiments, the flow rates of SiH 4 and Al(CH 3 ) 3 were constant. According to the site competition model, aluminum replaces silicon.…”

Section: Doping Levelsmentioning

confidence: 99%

“…[1][2][3] The common gases are i) SiH 4 and C 3 H 8 (or C 2 H 4 ) diluted in H 2 for growth rate, and ii) N 2 and TMA (Al(CH 3 ) 3 ) for n-type and p-type doping. It is worth noting that the recent use of chlorinated silicon precursors or simply HCl to SiH 4 is very promising for bulk [4] and epitaxial [5][6] CVD growth.…”

Section: Introductionmentioning

confidence: 99%

“…The aim of this paper is to contribute to the understanding of and to quantify the large number of experimental results obtained in n-and p-doping levels measured during the growth of SiC thin layers by the standard CVD process using SiH 4 and C 3 H 8 in horizontal hot-wall reactors. During the last ten years, considerable improvements in the understanding of the SiC-CVD process and in the development of machines have been made.…”

Section: Introductionmentioning

confidence: 99%

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Growth and Doping Modeling of SiC‐CVD in a Horizontal Hot‐Wall Reactor

Nishizawa

Pons

2006

Chemical Vapor Deposition

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Modeling and simulation of the SiC epitaxial growth, and doping in a horizontal hot-wall reactor from common precursors (SiH 4 ; C 3 H 8 diluted in H 2 for growth; N 2 and Al(CH 3 ) 3 for n-type and p-type doping) are presented. The growth and doping features of SiC thin layers on both Si-terminated and C-terminated surfaces are analyzed as a function of various inlet source gas conditions, i.e., various C/Si ratios. The role of the actual surface mass fluxes of both Si-containing and C-containing species and their ratio is analyzed and compared to the inlet experimental parameters. It is demonstrated that the doping level resulting from lattice site competition effects can be quantified by the actual C/Si ratio calculated above the growing surface. Moreover, the surface morphology of the epitaxial layer is explained on the basis of the mass fluxes at the growing surface.

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“…According to thermophysical studies of the gas-phase chemistry, the actual molecules interacting with the surface are mainly SiCl 2 in chloride-based CVD [7][8][9] as compared to mainly SiH 2 in conventional CVD [7,9]. For a better understanding of the impact of the chloride-based chemistry on the growth, the differences in how the SiCl 2 and SiH 2 molecules interact with the SiC surface are of great interest.…”

Section: Introductionmentioning

confidence: 99%

Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

et al. 2013

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Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations, 2013, Theoretical Chemistry accounts, (132) The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour deposition process for silicon carbide (SiC) epitaxial layers is studied by quantum-chemical calculations of the adsorption and diffusion of SiH 2 and SiCl 2 on the (000-1) 4H-SiC surface. SiH 2 was found to bind stronger to the surface than SiCl 2 by approximately 100 kJ mol -1 and to have a 50 kJ mol -1 lower energy barrier for diffusion on the fully hydrogen-terminated surface. On a bare SiC surface, without hydrogen termination, the SiCl 2 molecule has a somewhat lower energy barrier for diffusion. SiCl 2 is found to require a higher activation energy for desorption once chemisorbed, compared to the SiH 2 molecule. Gibbs free-energy calculations also indicate that the SiC surface may not be fully hydrogen terminated at CVD conditions since missing-neighbouring pair of surface hydrogens is found to be a likely type of defect on a hydrogen terminated SiC surface.

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Growth kinetics study in halide chemical vapor deposition of SiC

Cited by 29 publications

References 26 publications

Gas‐Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine‐Containing Species

Gas‐Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine‐Containing Species

Growth and Doping Modeling of SiC‐CVD in a Horizontal Hot‐Wall Reactor

Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

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