Growth law of silicon oxides by dry oxidation

Abstract

A theoretical description of the kinetic mechanism of thermal oxidation in silicon is proposed by complementing the Deal-Grove model. The relationship of the classical linear-parabolic growth law is generalized to the logarithmic growth law which provides a complete description for the whole regime of oxide films. In particular, the enhanced oxidation rate in the thin regime may be attributed to the diffusion length, which is characterized by the difference between the activation energies of the diffusion process and the reaction process. Our fitting of the logarithmic growth law to several experimental results shows excellent agreement and the fitting parameters also provide activation energies of 1.50 and 2.49 eV for the interfacial reaction and diffusion in oxide respectively.

Experimental evidence of oxidant-diffusion-limited oxidation of SiGe alloys

“…As is evident, good straight lines are obtained in both cases. It can be seen that activation energy of oxygen diffusivity E a is 2.48 eV for Si, in good agreement with the value of 2.58 and 2.49 eV for Si oxidation reported by Thanikasalam et al 19 and Kim et al, 20 respectively. This is a strong indication that the oxidation rate is limited by oxygen diffusion in the oxidation process.…”

Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing

“…CET and breakdown voltage show a logarithmical diffusion limited growthbehavior 41 in two different regimes: the first one can be localized in the period between 1 min and 6 min, and the second regime within 7 min and 10 min which shows a steeper slope: within the first regime the thickness of the interface layer increases slightly from about 0.2 nm to 0.5 nm followed by an increase from 1.5 nm to 7 nm in the second regime. This behavior reflects an inhibited growth behavior of interfacial oxide in the first regime which might be due to the forming of a germanate phase followed by the growth of Geoxide in the second regime.…”

High temperature oxidation behavior of FeCo‐based nanocrystalline alloys

“…The reference values in the literature [8] yield 96 kJ/mol for pure Si oxidation at higher temperatures. For pure Fe oxidation the energy reference [9] is 200 kJ/mol for higher temperatures and 98 kJ/mol for lower temperatures.…”