When two similar visual stimuli are presented in rapid succession at the same location, they fuse. For example, a red and a green disk are perceived as one single yellow disk. Likewise, verniers with opposite offset directions are perceived as one vernier with an almost aligned vernier offset. In fusion, observers have no conscious access to the individual stimuli. Using transcranial magnetic stimulation (TMS), it has been shown that feature fusion for verniers can be modulated for about 400 ms in that either the first or the second vernier dominates the percept, depending on TMS onset. Here, we use light masks to modulate feature fusion for verniers, motion, and color. Our results are similar to the TMS experiment and show that individual visual features are stored for a substantial amount of time before they are integrated.

The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 × 1011 eV−1 cm−2 were achieved by oxygen annealing at high temperatures (550 °C–600 °C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate.

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Y2O3 and L2O3/ZrO2 stacks have been examined in terms of their electrical properties in Ge capacitors. It is discussed that scaling of L2O3/ZrO2 stacks into the sub 1 nm EOT regime can be achieved either by using thin amorphous La2O3 capped by a thin ZrO2 layer or by stabilizing the tetragonal or cubic very high-k phase of ZrO2 induced by diffused La and Ge atoms during a PDA step. Y2O3 shows very good interfacial qualities in terms of a low interface trap density and hysteresis when an annealing in O2 atmosphere is applied. Fowler-Nordheim tunneling is identified as the primary leakage current mechanism at high gate bias whereas for the low bias regime leakage current is primary conducted by direct tunneling through the Y2O3 layer.