Growth mechanism and structural characterization of hexagonal GaN films grown on cubic GaN (111)/GaAs (111)B substrates by MOVPE

VLS growth of GaN nanowires on various substrates

“…This growth was performed at 750 1C using triethylboron (TEB), PH 3 and at 930 1C with TMGa, DMHy on GaAs and GaP. In particular, as reported by Sanorpim et al [7], the h-GaN layer was deposited using a twostep process on GaAs. At first, a low-temperature (T growth ¼ 605 1C, V/III ratio ¼ 160, growth rate $0.5 nm/min) 75-nm-thick c-GaN buffer layer was grown followed by a 500-nm-thick hightemperature h-GaN layer (T growth ¼ 930 1C, V/III ratio ¼ 50, growth rate 410 nm/min).…”

“…However, in order to avoid nitridation damage of the substrate surfaces [7] and to study the transformation of cubic to hexagonal GaN, the combination of DMHy/TMGa was used for the growth of GaN on III-V substrates at low substrate temperatures (T growth o750 1C).…”