Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

Abstract

MOVPE of Au catalyzed p-GaAs nanowires on n-GaN layers. Left: VLS growth optimization (density and morphology). Middle and right: site-controlled pn-junctions by lateral and vertical anisotropic NWs in structured SiOx openings (scalebar 1 μm).

Direct Growth of Light-Emitting III–V Nanowires on Flexible Plastic Substrates

“…For example, vertical InAs NWs can be integrated on Si(100) by selectively growing in vertical SiO 2 nanotube templates . NW position and growth direction control can be achieved with a combination of vapor–liquid–solid (VLS) growth and selective area epitaxy that include a number of complicated and critical technological steps . For the plastics, the growth template could be fabricated, for example, by depositing and patterning spin-on-glass.…”

“…32 NW position and growth direction control can be achieved with a combination of vapor−liquid−solid (VLS) growth and selective area epitaxy that include a number of complicated and critical technological steps. 33 For the plastics, the growth template could be fabricated, for example, by depositing and patterning spin-on-glass. Here, we focus on the possibility (i) to grow high-quality III−V nanowires directly on plastic and (ii) to use them for device fabrication without the need for transfer processes or even NW planarization.…”

Management of light and scattering in InP NWs by dielectric polymer shell

“…Instead, the NW arrays may simply promote light propagation into the substrate, where it may not be helpful for devices where the active region comprises NWs [7][8][9]. In terms of optical characterization, a more complete picture is acquired by using a transparent substrate that enables NW growth on materials such as glass [10], GaN [11,12] or transparent conductive oxides [13,14]. Other approaches include peeled-off NWs embedded in polymer film [4,15], which however requires relatively difficult processing steps.…”