Growth Mechanism of Zinc Sulfide Films by Mist Chemical Vapor Deposition

Abstract

The mist chemical vapor deposition (mist CVD) method, which uses ultrasonically atomized solutions as sources, is an environmental friendly and cost-effective technology for the growth of compound semiconductors. This growth process is realized under atmospheric pressure and allows us to use many kinds of salts, complexes, and compounds with low toxicity for sources. Using the oxidizability of water including the source, most of the previous reports of the mist-CVD method are on oxide materials. In this study, we fabricated zinc sulfide (ZnS) films by mist-CVD method using thiourea-based water solutions as sources. Investigating the growth of ZnS by mist-CVD under various growth conditions and experimental setups, we proposed zinc-chloride complexes are necessary for the growth of ZnS and vaporized mist sources act as precursors.