Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy

Plante, M.C.; LaPierre, Ray

doi:10.1016/j.jcrysgro.2005.10.024

Cited by 111 publications

(127 citation statements)

References 29 publications

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“…There is a general agreement in literature 17,18 that the observed length/diameter dependence can be explained by a kinetic process including the diffusion of adatoms on the substrate surface and side faces of the wires, as schematically shown in Fig. 1.…”

supporting

confidence: 81%

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Debnath¹,

Meijers²,

Richter³

et al. 2007

Applied Physics Letters

224

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GaN nanowires have been grown without external catalyst on Si(111) substrates by plasma-assisted molecular beam epitaxy. Nanowire aspect ratios (length/diameter) of about 250 have been achieved. During the initial stage of the growth, there is a nucleation process in which the number of wires increases and the most probable nucleation diameter of about 10nm has been observed, which slowly increases with deposition time. For deposition time longer than the nucleation stage, the nanowire length as a function of diameter monotonically decreases. This phenomenon can be explained by adatom diffusion on the nanowire lateral surface towards the tip.

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supporting

confidence: 81%

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Debnath¹,

Meijers²,

Richter³

et al. 2007

Applied Physics Letters

224

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“…At this point, the NWs have already reached a certain critical height where shadowing from neighboring NWs could limit the direct impingement near each NW base. 7,21 As a result, the GaP shell is absent near the base of the NWs as depicted in Fig. 1.…”

Section: A Electron Microscopy Analysismentioning

confidence: 99%

Structural and optical analysis of GaAsP/GaP core-shell nanowires

Mohseni

Rodrigues

Galzerani

et al. 2009

Journal of Applied Physics

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Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires J. Appl. Phys. 110, 094308 (2011) Study on the structural and physical properties of ZnO nanowire arrays grown via electrochemical and hydrothermal depositions J. Appl. Phys. 110, 094310 (2011) Growth of single-crystalline cobalt silicide nanowires with excellent physical properties J. Appl. Phys. 110, 074302 (2011) General hypothesis for nanowire synthesis. I. Extended principles and evidential (experimental and theoretical) demonstration J. Appl. Phys. 110, 054311 (2011) Thermoelectric properties for single crystal bismuth nanowires using a mean free path limitation model J. Appl. Phys. 110, 053702 (2011) Additional information on J. Appl. Phys. The structural and optical properties of GaAsP/GaP core-shell nanowires grown by gas source molecular beam epitaxy were investigated by transmission electron microscopy, Raman spectroscopy, photoluminescence ͑PL͒, and magneto-PL. The effects of surface depletion and compositional variations in the ternary alloy manifested as a redshift in GaAsP PL upon surface passivation, and a decrease in redshift in PL in the presence of a magnetic field due to spatial confinement of carriers.

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“…Due to the anisotropy of surface properties, e.g., chemical potential and sticking coefficient, the adatoms that are impinged to the substrate surface diffuse and migrate along the nanowire sidewall, promoting vertical growth. This growth model is supported by the observation of higher nanowire axial growth rate (along the vertical direction) as the increase of substrate temperature and thinner nanowires being longer [48,49].…”

Section: Spontaneous Formation Of Iii-nitride Nanowiresmentioning

confidence: 66%

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Zhao

2017

Crystals

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p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown p-type InN and AlN-two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV) optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

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Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy

Cited by 111 publications

References 29 publications

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Structural and optical analysis of GaAsP/GaP core-shell nanowires

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

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