1987
DOI: 10.1007/bf01132053
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Growth mechanisms of modified eutectic silicon

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Cited by 13 publications
(4 citation statements)
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“…Following the formulation the effective value of the J-integral during each cycle can be written as [17,18]:…”
Section: Parameter P Jmentioning
confidence: 99%
“…Following the formulation the effective value of the J-integral during each cycle can be written as [17,18]:…”
Section: Parameter P Jmentioning
confidence: 99%
“…Previous studies on the morphology and growth mechanisms of primary Si in Al-Si alloys largely employed ex situ methods. [8][9][10][11][12] The growth mechanisms of primary Si are determined usually indirectly by analyzing growth traces. [12] One of the key inferences based on such analyses is that fast-growing interfaces such as {113} grow out, leaving behind prominent {111} facets.…”
Section: Introductionmentioning
confidence: 99%
“…At high cooling rate, more developed, rough solid/ liquid interface seemed to be more advantageous to join the new atoms to the crystal of the α c -AlFeMnSi phase. This morphological phenomenon, might be explained by general assumptions of Perpendicular Macroscopic Growth theory, describing evolution of the eutectic silicon crystals morphology, subjected to chemical modification [20]. have taken a shape of the faceted polyhedra, of habit subordinated to the local preferences for the crystallographic planes growth.…”
Section: Evolution Of the Alfemnsi Intermetallics Morphology As Affecmentioning
confidence: 99%