Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using a HfO2 ceramic target

Aguirre, Brandon Adrian; Vemuri, R.S.; Zubía, David; Engelhard, Mark H.; Shutthananadan, V; Bharathi, K. Kamala; Ramana, C. V.

doi:10.1016/j.apsusc.2010.09.072

Cited by 40 publications

(26 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, the value of the dielectric constant obtained in the present study is significantly lower than those previously reported for amorphous HfO 2 (about 24) in Refs. [17,18] but it is in good agreement with the values obtained for thin polycrystalline HfO 2 films (11)(12)(13)(14)(15)(16) in Refs. [19,20].…”

Section: Resultssupporting

confidence: 92%

“…As mentioned in the Introduction Aguirre et al [14] showed that the interface structure, morphology and chemical composition of HfO 2 films obtained by the radio-frequency magnetron sputtering technique depended significantly on their growth temperature. According to the findings of Ref.…”

Section: Resultsmentioning

confidence: 98%

“…c o m / l o c a t e / s s e media at room temperature and upon heating in comparison to amorphous HfO 2 . Polycrystalline HfO 2 films could be grown by the magnetron sputtering technique at temperatures higher than 200°C [14] or they can be also obtained by the recrystallization of amorphous HfO 2 films during subsequent annealing steps that are required in current industrial fabrication processes. One should also notice that the thicker HfO 2 shows the better chemical stability in aqueous alkaline media and acids.…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

“…In most previous studies the main attention was focused on the investigation of the electrical and optical properties of amorphous thin HfO 2 films, which are usually grown by low-temperature deposition techniques [14]. In Ref.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

Kolkovsky

Lukat

Kurth

et al. 2015

Solid-State Electronics

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 98%

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

Kolkovsky

Lukat

Kurth

et al. 2015

Solid-State Electronics

View full text Add to dashboard Cite

“…In order to overcome this problem, considerable research on the growth and characterizations of high-k dielectric materials such as Ta 2 O 5 , TiO 2 , ZrO 2 , HfO 2 are currently under consideration [2][3][4]. Hafnium oxide (HfO 2 ) is considered as a promising candidate because of its relatively higher dielectric constant, wide bandgap and high temperature stability [5][6][7]. In addition, HfO 2 is also found to be a promising candidate for sensor applications [12].…”

Section: Introductionmentioning

confidence: 99%

Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio

Das

Ghosh

Tripathy

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

In this work, hafnium oxide (HfO 2 ) thin films were deposited on p-type silicon substrate by radio frequency magnetron sputtering at various working pressure ranging from 4 9 10 -3 to 1 9 10 -2 mbar and Ar/O 2 flow ratio from 1:4 to 4:1. The morphological and electrical properties of the sputtered films were investigated and a correlation between the surface and electrical properties of the HfO 2 films was established with the variation of sputtering parameters. The evolution of monoclinic structure of the hafnium oxide thin films was observed by XRD studies. The surface of the HfO 2 films became rough with the increase in grain size at the sputter pressure of 8 9 10 -3 mbar and Ar/O 2 gas flow ratio of 1:4. The formation of HfO 2 bond was seen from FTIR spectra. The oxide charge density has a lower value for the sputter pressure of 8 9 10 -3 mbar and Ar/O 2 gas flow ratio of 1:4 due to the evolution of larger grains. The interface charge density was found to be minimum at a sputter pressure of 8 9 10 -3 mbar.

show abstract

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

et al. 2021

View full text Add to dashboard Cite

The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, is used to quantify defects and investigate their mobility. The exploitation of high‐resolution X‐ray diffraction‐based methods for the evaluation of structural defects in semiconductor materials and devices is reviewed. An efficient and non‐destructive characterization is possible for structural parameters such as, lattice strain and tilt, layer composition and thickness, lattice mismatch, and dislocation density. The description of specific experimental diffraction geometries and scanning methods is provided. Today's X‐ray diffraction based methods are evaluated and compared, also with respect to their applicability limits. The goal is to understand the close relationship between lattice strain and structural defects. For different material systems, the appropriate analytical methods are highlighted.

show abstract

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using a HfO2 ceramic target

Cited by 40 publications

References 24 publications

Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

Reactively sputtered hafnium oxide on silicon dioxide: Structural and electrical properties

Surface and interface studies of RF sputtered HfO2 thin films with working pressure and gas flow ratio

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Contact Info

Product

Resources

About