Growth mode and interface structure of Ag on the HF-treated Si(111):H surface

Nishiyama, Akira; Horst, G. Ter; Zagwijn, P.M.; Hoven, G.N. van den; Frenken, J.W.M.; Garten, Frank; Schlatmann, A. R.; Vrijmoeth, J.

doi:10.1016/0039-6028(95)01073-4

Cited by 33 publications

(13 citation statements)

References 31 publications

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“…This expectation is consistent with experimental observation for Ag growth on the H / Si͑111͒ surface, i.e., the VW mode. 2,[9][10][11] The diffusion barrier 0.27 eV for Ag migration inside a HUC on Si͑111͒ 7 ϫ 7, despite the presence of dangling bonds implying large binding energies, differs little from that for Ag on the H / Si͑111͒ surface. Looking into the diffusion pathways in Fig.…”

Section: Discussionmentioning

confidence: 99%

“…[4][5][6][7][8] In contrast, the Ag growth mode on the H-terminated Si͑111͒ surface changes the Volmer-Weber ͑VW͒ mode, in which three-dimensional Ag islands are formed. 2,[9][10][11] It is commonly argued that the mobility of the adsorbed metal adatoms is enhanced on the H-terminated Si͑111͒ surface compared to that on the clean Si͑111͒ surface. 4,12 Scanning-tunneling microscopy ͑STM͒ studies showed that the mobility of the metal adatoms between the half-unit cells ͑HUC's͒ of Si͑111͒ 7 ϫ 7 is much lower than that inside a HUC.…”

Section: Introductionmentioning

confidence: 99%

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Diffusion of Ag adatom on the H-terminated and clean Si(111) surfaces: A first-principles study

Jeong

2005

Phys. Rev. B

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Using a first-principles calculation method, we investigate the adsorption and diffusion of a Ag adatom on the H-terminated and clean Si͑111͒ surface, which would be useful in understanding the initial stages of metal growth on semiconductor substrates. We perform extensive searches for metastable surface structures induced by the Ag adatom adsorption, and then find its diffusion barriers and pathways on both kinds of the substrates. The calculated barrier for the Ag atom on the H-terminated surface is only 0.14 eV. On the clean surface, the diffusion barriers inside a half-unit cell ͑HUC͒ and between HUC's are calculated at 0.27 and 0.88 eV, respectively. The present results provide a qualitative description of the Ag growth modes on the Si͑111͒ surfaces: the three-dimensional island growth on the H-terminated surface and the formation of the wetting layer on the clean surface. In addition, the calculated barrier of 0.88 eV agrees well with the diffusion barrier measured by recent scanning-tunneling microscopy.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Diffusion of Ag adatom on the H-terminated and clean Si(111) surfaces: A first-principles study

Jeong

2005

Phys. Rev. B

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“…Thus, in this study, we theoretically investigate the roles of H atoms in metal growth, focusing on H segregation for Ag on the H-terminated Si͑111͒ surface, which has been extensively studied in the last decades from both academic and practical points. 1, 3,4,[13][14][15][16][17][18][19] As for H position in the Ag growth on the H / Si͑111͒ surface, there are two different arguments. The first one states that the H layer remains at the Ag-Si interface even at the later stages of overlayer growth.…”

Section: Introductionmentioning

confidence: 99%

Segregation of H as a surfactant during the formation of an Ag cluster on H-terminated Si(111): First-principles total-energy calculations

Jeong

2006

Phys. Rev. B

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The initial stages of Ag nanocluster formation on the H-terminated Si͑111͒ surface are investigated using first-principles total-energy calculations. The surface remains structurally unchanged by the adsorption of a single Ag adatom that slides nearly freely with a diffusion barrier of 0.14 eV on the H / Si͑111͒ surface ͓Phys. Rev. B 71, 035310 ͑2005͔͒. When the Ag adatoms aggregate on this surface, however, the H atoms segregate from the substrate with extremely small energy barriers of ϳ0.2 eV. The Ag n clusters ͑n ജ 2͒ with H segregation, where n is a number of Ag atoms in a cluster, are more tightly bound to the Si substrate than the clusters without H segregation since they make strong Ag-Si bonds, suggesting that such clusters can serve as seeds for island growth. The present findings are consistent with the depth-resolved measurement of H and real-space observations of the Ag islands on the H / Si͑111͒ surface.

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“…It has been suggested that hydrogen at the interface can be partially removed during Ag deposition at high temperatures. [22][23][24] If the hydrogen coverage at the interface would decrease below 0.3 ML, an undesired reconstruction of the surface, to a 2D layer of the Si(111) √ 3x √ 3-Ag structure plus thicker Ag(111) islands could occur. 22,25 So, it would be desirable to lower the Ag temperature deposition in order to avoid a significant hydrogen elimination at the interface, and therefore the above-mentioned surface reconstruction.…”

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confidence: 99%

Quantum-well states in ultrathin Ag(111) films deposited onto H-passivated Si(111)-(1×1) surfaces

et al. 2002

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Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 o C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12 monolayers have been grown. Angle resolved photoemission spectroscopy has been used to study the valence band electronic properties of these films. Welldefined Ag sp quantum-well states (QWS) have been observed at discrete energies between 0.5-2eV below the Fermi level, and their dispersions have been measured along the ΓK, ΓM (M ′ ) and ΓL symmetry directions. QWS show a parabolic bidimensional dispersion, with in-plane effective mass of 0.38-0.50mo, along the ΓK and ΓM (M ′ ) directions, whereas no dispersion has been found along the ΓL direction, indicating the low-dimensional electronic character of these states. The binding energy dependence of the QWS as a function of Ag film thickness has been analyzed in the framework of the phase accumulation model. According to this model, a reflectivity of 70% has been estimated for the Ag-sp states at the Ag/H/Si(111)-(1x1) interface.

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Growth mode and interface structure of Ag on the HF-treated Si(111):H surface

Cited by 33 publications

References 31 publications

Diffusion of Ag adatom on the H-terminated and clean Si(111) surfaces: A first-principles study

Diffusion of Ag adatom on the H-terminated and clean Si(111) surfaces: A first-principles study

Segregation of H as a surfactant during the formation of an Ag cluster on H-terminated Si(111): First-principles total-energy calculations

Quantum-well states in ultrathin Ag(111) films deposited onto H-passivated Si(111)-(1×1) surfaces

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