Growth mode control of CVD-grown WS2 monolayer flakes via O2 pre-annealing for organic surfactant oxidation

An, Gwang Hwi; Kim, Su Jin; Shin, So Jeong; Choi, Min; Kim, Dohyun; Rahman, Ikhwan Nur; Bang, Junhyeok; Kim, Dong‐Hyun; Lee, Hyun Seok

doi:10.1016/j.apsusc.2022.152564

Cited by 6 publications

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The W 4f core level spectrum can be deconvoluted to three peaks at 33.88, 35.98, and 39.38 eV, corresponding to W 4f 7/2 , W 4f 5/2 , and W 5p 3/2 orbits of W, respectively. 43 The core level spectrum of S 2p can also be deconvoluted into two characteristic peaks located at 161.92 and 163.11 eV, which can be attributed to S 2p 3/2 and S 2p 1/2 levels of S 2− oxidation in WS 2 . 24,42 Moreover, a Na 1s peak positioned at 1072.02 eV can also be observed in Figure 4i, indicating the existence of Na in synthesized WS 2 .…”

Section: ■ Results and Discussionmentioning

confidence: 98%

Vapor–Liquid–Solid Growth of Morphology-Tailorable WS₂ toward P-Type Monolayer Field-Effect Transistors

Xie

Meng

Chen

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Although substantial efforts have been made, controllable synthesis of p-type WS2 remains a challenge. In this work, we employ NaCl as a seeding promoter to realize vapor–liquid–solid (VLS) growth of p-type WS2. Morphological evolution, including a one-dimensional (1D) nanowire to two-dimensional (2D) planar domain and 2D shape transition of WS2 domains, can be well-controlled by the growth temperature and sulfur introduction time. A high growth temperature is required to enable planar growth of 2D WS2, and a sulfur-rich environment is found to facilitate the growth of high-quality WS2. Raman and photoluminescence (PL) mappings demonstrate uniform crystallinity and high quantum efficiency of VLS-grown WS2. Moreover, monolayer WS2-based field-effect transistors (FETs) are fabricated, showing p-type conducting behavior, which is different from previous reported n-type FETs from WS2 grown by other methods. First-principles calculations show that the p-type behavior originates from the substitution of Na at the W site, which will form an additional acceptor level above the valence band maximum (VBM). This facile VLS growth method opens the avenue to realize the p–n WS2 homojunctions and p/n-WS2-based heterojunctions for monolayer wearable electronic, photonic, optoelectronic, and biosensing devices and should also be a great benefit to the development of 2D complementary metal–oxide–semiconductor (CMOS) circuit applications.

show abstract

Section: ■ Results and Discussionmentioning

confidence: 98%

Vapor–Liquid–Solid Growth of Morphology-Tailorable WS₂ toward P-Type Monolayer Field-Effect Transistors

Xie

Meng

Chen

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition

Esposito¹,

Bosi²,

Attolini³

et al. 2023

Applied Surface Science

View full text Add to dashboard Cite

Crystal violet as CMOS-compatible alkali-free promoter for CVD growth of MoSe2 monolayers: Comparative surface analysis with alkali-based promoter

Kim

Choi

et al. 2023

Current Applied Physics

View full text Add to dashboard Cite

Growth mode control of CVD-grown WS2 monolayer flakes via O2 pre-annealing for organic surfactant oxidation

Cited by 6 publications

References 31 publications

Vapor–Liquid–Solid Growth of Morphology-Tailorable WS₂ toward P-Type Monolayer Field-Effect Transistors

Vapor–Liquid–Solid Growth of Morphology-Tailorable WS₂ toward P-Type Monolayer Field-Effect Transistors

Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition

Crystal violet as CMOS-compatible alkali-free promoter for CVD growth of MoSe2 monolayers: Comparative surface analysis with alkali-based promoter

Contact Info

Product

Resources

About

Growth mode control of CVD-grown WS2 monolayer flakes via O2 pre-annealing for organic surfactant oxidation

Cited by 6 publications

References 31 publications

Vapor–Liquid–Solid Growth of Morphology-Tailorable WS2 toward P-Type Monolayer Field-Effect Transistors

Vapor–Liquid–Solid Growth of Morphology-Tailorable WS2 toward P-Type Monolayer Field-Effect Transistors

Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition

Crystal violet as CMOS-compatible alkali-free promoter for CVD growth of MoSe2 monolayers: Comparative surface analysis with alkali-based promoter

Contact Info

Product

Resources

About

Vapor–Liquid–Solid Growth of Morphology-Tailorable WS₂ toward P-Type Monolayer Field-Effect Transistors

Vapor–Liquid–Solid Growth of Morphology-Tailorable WS₂ toward P-Type Monolayer Field-Effect Transistors