Growth mode during initial stage of chemical vapor deposition

Kajikawa, Yuya; Noda, Suguru

doi:10.1016/j.apsusc.2004.10.021

Cited by 53 publications

(34 citation statements)

References 77 publications

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“…This behavior is attributed either to the difference in the sticking coefficients on the substrate and on the film nuclei which are already present on the surface, or to the desorption of the adsorbents [22]. The observed continuous decrease of the nucleation delay with the increase of the deposition temperature in low to moderate temperature range followed by stabilization at high deposition temperature was also observed in the case of CVD of Si [23].…”

Section: Resultsmentioning

confidence: 64%

Experimental and computational investigation of chemical vapor deposition of Cu from Cu amidinate

Aviziotis

Cheimarios

Vahlas

et al. 2013

Surface and Coatings Technology

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International audienceExperiments and computations are performed for the CuMOCVD fromcopper(I) N,N′-di-isopropylacetamidinate [Cu(iPr–Me–amd)]2 or [Cu(amd)]2 where amd = CH(CH3)2NC(CH3)NCH(CH3)2. The a priori choice of this precursor is dictated mainly by its oxygen and halogen–free ligands allowing co-deposition with oxophilic elements such as Al and by its ability to provide conformal Cu films in atomic layer deposition processes. The nucleation delay and the deposition rate as a function of deposition temperature and the evolution of the deposition rate along the radius of the substrate holder are experimentally determined with depositions performed at 1333 Pa in a vertical, warm wall, MOCVD reactor. With the aim to propose a kinetic scenario for Cu deposition, based on recently published experimental results for the decomposition of [Cu(amd)]2, a predictive 3D model of the process is built, based on the mass, momentum, energy and species transport equations. In agreement with the previously mentioned experimental results, it is demonstrated that a single surface reaction is responsible for the deposition of Cu. Two surface kinetics expressions are implemented depending on the deposition regime; a simple Arrhenius type expression in the reaction limited regime and a Langmuir–Hinshelwood type expression prevailing in the transport limited regimewhich takes into account the inhibition effects. The two different kinetics designate a modification in the surface reaction mechanism. The results show good agreement between experiments and computations. Complementary computations are performed, in order to compare the deposition rates of the Cu films deposited via the [Cu(amd)]2 and the (hfac)Cu(VTMS) and Cu(hfac)2 so as to determine relative advantages and disadvantages of Cu MOCVD from [Cu(amd)]2

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Section: Resultsmentioning

confidence: 64%

Experimental and computational investigation of chemical vapor deposition of Cu from Cu amidinate

Aviziotis

Cheimarios

Vahlas

et al. 2013

Surface and Coatings Technology

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“…growth), as thought in particular by Puglisi et al [14], (iii) an autocatalytic role of the already deposited silicon atoms, as proposed by Kajikawa and Noda [15] and (iv) a specific role for SiH 2 regarding nucleation as mentioned by Miyazaki et al [12].…”

Section: Physical and Chemical Phenomena Consideredmentioning

confidence: 85%

“…For Kajikawa and Noda [15], CVD processes are characterized by the existence of an incubation time, corresponding to the lag time for deposition during its initial stage. Within the incubation period, film deposition is slower than during continuous film growth, and the deposition rate grows exponentially with time.…”

Section: Introductionmentioning

confidence: 99%

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Cocheteau

Mur

Billon

et al. 2008

Chemical Engineering Journal

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“…[5] If the substrate temperature is relatively high, the grain size can be quite large. [6] In either case, grain boundaries are major obstacles to cleavage cracking.…”

Section: Introductionmentioning

confidence: 99%

Bifurcation and Deviation of Cleavage Paths at Through-Thickness Grain Boundaries

Chen

Qiao

2008

Metall Mater Trans A

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The behavior of cleavage crack fronts at grain boundaries in free-standing silicon thin films is investigated through a microtensile experiment. In addition to the crystallographic orientation, the orientation of grain boundary plane also plays a critical role. With respect to the initial crack surface, if the inclination angle is relatively small, the crack tends to penetrate across the boundary; if the angle is large, the crack may either bifurcate along the boundary or turn back on another crystallographic plane. The former is triggered by crack front transmission, and the latter may result in a higher critical crack growth driving force.

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Growth mode during initial stage of chemical vapor deposition

Cited by 53 publications

References 77 publications

Experimental and computational investigation of chemical vapor deposition of Cu from Cu amidinate

Experimental and computational investigation of chemical vapor deposition of Cu from Cu amidinate

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

Bifurcation and Deviation of Cleavage Paths at Through-Thickness Grain Boundaries

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