1994
DOI: 10.1016/0040-6090(94)90162-7
|View full text |Cite
|
Sign up to set email alerts
|

Growth modes of epitaxial copper films on c-sapphire

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
8
0

Year Published

2004
2004
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 9 publications
(8 citation statements)
references
References 11 publications
0
8
0
Order By: Relevance
“…There are six diffraction spots in the pole figure instead of three because there are two discrete sets of crystallites from twinning with an azimuthal angle of 60°a part. Twinning defects are common in the epitaxial growth of fcc metals due to both growth accidents and grain encounters (16,17). Similar to the Cu(200) pole figure for Cu(111) growth on Ti/Al 2 O 3 (0001), the Cu(111) pole figure for Cu(100) growth on Si(100) shows discrete Bragg reflections, indicating cube-oncube epitaxial growth of Cu on the Si(100) substrate (Fig.…”
Section: Resultsmentioning
confidence: 64%
See 1 more Smart Citation
“…There are six diffraction spots in the pole figure instead of three because there are two discrete sets of crystallites from twinning with an azimuthal angle of 60°a part. Twinning defects are common in the epitaxial growth of fcc metals due to both growth accidents and grain encounters (16,17). Similar to the Cu(200) pole figure for Cu(111) growth on Ti/Al 2 O 3 (0001), the Cu(111) pole figure for Cu(100) growth on Si(100) shows discrete Bragg reflections, indicating cube-oncube epitaxial growth of Cu on the Si(100) substrate (Fig.…”
Section: Resultsmentioning
confidence: 64%
“…In particular, researchers have used physical vapor deposition (PVD) and molecular beam epitaxy to successfully grow Cu epitaxially on Si and Al 2 O 3 (12,13,(15)(16)(17). It is worth noting that Si has garnered interest as a cathode in photoelectrochemical (PEC) cells (18,19), and developing synthetic methods to engineer the surface structure of Cu on Si could be advantageous for controlling the performance and selectivity of PEC CO 2 R devices.…”
mentioning
confidence: 99%
“…The study of the Al 2 O 3 (0001)/Cu­(111) epitaxy is thus of great importance and was first studied in 1968 by Katz et al and thereafter by various other research groups. ,, The two different thermodynamically stable orientation relationships, OR-I and OR-II, between Cu(111) and c-plane sapphire are rotated by 30° about ⟨111⟩. In OR-I, Cu atoms are filling the sapphire octahedral interstitial sites with a lattice mismatch of −6.9%.…”
mentioning
confidence: 99%
“…This is not unlikely since extensive twinning in the copper grains was found in the TEM studies. Another explanation given by Knoll and Bialas [15] is that the off-centre peaks emerge from steps (different crystal planes) in the a-Al 2 O 3 (0 0 1) surface.…”
Section: Resultsmentioning
confidence: 95%