“…However, due to high reactivity of the oxygen-containing reactants, it has been difficult to apply ZnO ALD onto chemically sensitive substrate materials. For example, ZnO can be used as a charge transport layer in photovoltaic cells; however, for hybrid organic–inorganic perovskites, usage of water during ALD may irreversibly damage the substrate and degrade the device performance. , The reactants may also oxidize the surface of the substrate to form an interfacial oxide, which can cause leakage current and degrade device performance. , In general, the ALD growth behavior and the physicochemical properties of the resulting oxide films are highly dependent to the type of the oxygen source. ,− The oxygen vacancies on the ZnO thin film in the ALD process can be controlled by changing oxygen reactants, which can directly affect the electrical properties of the thin films . Therefore, it is desirable to develop novel alternative reactants with controllable reactivity in order to expand ZnO ALD to various wider applications.…”