Growth of (001) oriented La0.5Sr0.5CoO3 films directly on SiO2/Si substrate by pulsed laser deposition

Growth of La0.5Sr0.5CoO3 thin film on MgO-buffered Si substrate by pulsed laser deposition method: Evolution of crystalline orientation, morphology and growth mode with substrate temperature

“…This trend is consistent with the evolution of crystalline orientation and surface morphology with substrate temperature. It should be noted that the epitaxial LSCO film exhibits a minimum value around 600 mO cm, which is comparable to that of the film grown on single crystal (200 mO cm) [5], and superior to that of the film grown on Si substrate (1000-10,000 mO cm) [8].…”

“…For example, the ferroelectric thin film memory's fatigue and aging problems can be solved efficiently. LSCO, as a desirable candidate for electrode materials, has attracted more and more attention in past few years [3][4][5][6][7][8][9]. Sintered LSCO ceramics have a pseudocubic perovskite structure with a lattice parameter of 0.383 nm and a resistivity of 90 mO cm at room temperature.…”