Growth of (103) fiber-textured SrBi2Nb2O9 films on Pt-coated silicon

Abstract

Effect of bismuth on the ferroelectric properties of SrBi 2 Ta 2 O 9 thin films deposited on Pt/SiO 2 /Si by a modified radio-frequency magnetron sputtering technique J. Vac. Sci. Technol. A 16, 2505 (1998); 10.1116/1.581373 Sr 0.8 Bi 2.5 Ta 1.2 Nb 0.9 O 9+x ferroelectric thin films prepared by two-target off-axis radio frequency magnetron sputtering ͑103͒ fiber-textured SrBi 2 Nb 2 O 9 thin films have been grown on Pt-coated Si substrates using a SrRuO 3 buffer layer. High-resolution transmission electron microscopy reveals that the fiber texture arises from the local epitaxial growth of ͑111͒ SrRuO 3 grains on ͑111͒ Pt grains and in turn ͑103͒ SrBi 2 Nb 2 O 9 grains on ͑111͒ SrRuO 3 grains. The films exhibit remanent polarization values of 9 C/cm 2 . The uniform grain orientation ͑fiber texture͒ should minimize grain-to-grain variations in the remanent polarization, which is important to continued scaling of ferroelectric memory device structures.

Structural, dielectric and piezoelectric properties of SrBi2Nb2O9 and Sr0.8Bi2.2Nb2O9 ceramics

“…Doping can be done on at A/B site within the perovskite like units. BLSF's SBN with Sr-deficient and Bi-excess compositions was found to show better ferroelectric and dielectric properties [18][19][20]. Within the perovskite like units, partial substitutions of strontium ions by bismuth ions would increase the Curie temperature and improve the dielectric properties in both SBN and SBT [21,23].…”

Epitaxial growth of atomic-scale smooth Ir electrode films on MgO buffered Si(100) substrates by PLD

“…ferroelectric and dielectric oxides, on silicon have been paid much attention for their various applications in miniaturized devices [1][2][3]. Electrodes are required to integrate these perovskite oxide films into devices, and the basic device structure is composed of a bottom and a top electrode and an oxide layer between the two electrodes.…”

The Controlled Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

“…6), and the growth conditions is a key advantage of epitaxial growth. 172,[247][248][249][250][251][252][253] Orientation control is vital to the preparation of samples suitable for establishing the intrinsic properties of materials, especially those that cannot be prepared as bulk single crystals due to their metastability, high melting temperatures, or phase transitions that occur on cooling. When it comes to applications, techniques that can improve the functional properties of oxide films by controlling film texture through epitaxial growth on a grain-by-grain basis (local epitaxy) are also utilized, e.g., ion-beam-assisted deposition 254,255 and rolling-assisted biaxially textured substrates 256,257 for the growth of YBa 2 Cu 3 O 7 superconducting cables 258 as well as Pb(Zr,Ti)O 3 in FeRAMs.…”