Growth of (111) and (100) CdTe films on (100) GaAs substrates by hot wall epitaxy

Hetero-epitaxial crystal growth of CdTe on GaAs substrates

“…In the present case, the H 2 SO 4 :H 2 O 2 :H 2 O/HCl-treated surface led to a (1 0 0)-oriented film, whereas a H 2 SO 4 :H 2 O 2 :H 2 O/HF-treated surface led to (1 1 1)-oriented films for the same growth conditions. In both HWE and MBE, (1 1 1)-oriented films were formed either by preheating at 580 1C for a long time [13] or at higher temperatures [14]. Here what appeared to be (1 1 1)B growth pits were observed in layers deposited on HF-treated GaAs, implying that the substrate was As-rich [12], allowing Cd atoms to form the first layer.…”

Close-spaced sublimation growth of homo- and hetero-epitaxial CdTe thick films

“…Therefore, these results suggest that it may be possible to investigate the epitaxy of CdTe on GaAs, where a strain relaxation process must be involved at the interfacial layer. by preheating at 580 1C for longer times [12] or at higher temperatures [13]. In the present study, this often occurred on a single substrate as shown in Fig.…”

“…Vapour deposition methods such as molecular beam epitaxy (MBE) [2], metal-organic chemical vapour phase epitaxy (MOVPE) [3] and hot-wall epitaxy (HWE) [4] have shown the capability of producing epitaxial high-quality CdTe films. However, MBE is not technically suitable for thick films nor is it cost-effective.…”

GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers

“…[14][15][16][17][18][19][20] The presence of extended defects 17-2' and various substrate orientations" have been reported to enhance Ga diffusion. Ga migration into CdTe layers has been reported several times.…”