Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy

Abstract

(111) CdTe has been grown on both GaAs/Si and Si by hot wall epitaxy. X-ray diffraction, photoluminescence, and defect etching indicate that these layers are of high crystalline quality. For CdTe grown on GaAs/Si, full width at half-maximum of x-ray rocking curves as low as 59 arcsec have been obtained whereas for CdTe grown on Si, x-ray linewidths as narrow as 315 arcsec have been obtained. HgCdTe grown on (111)B CdTe/GaAs/Si by metalorganic chemical vapor deposition is very smooth and devoid of the many defects that plague other orientations.

MOVPE growth of thick CdTe heteroepitaxial layers for X‐ray imaging detectors

“…It can be seen that the FWHM value rapidly decreases with the increasing layer thickness and then remains between 50 to 70 arcsec for the layers thicker than 30 µm. The FWHM values reported here are the best values for the MOVPE grown epilayers and are comparable to the best values reported in the literature by the hot-wall epitaxy, molecular-beam epitaxy, or other techniques [4,7,8], and approaches the FWHM value of the bulk-CdTe crystals. This indicates that highly crystalline thick CdTe layers can be obtained by the MOVPE growth technique with a higher growth rate.…”

“…This indicates that highly crystalline thick CdTe layers can be obtained by the MOVPE growth technique with a higher growth rate. The observed thickness dependence on the FWHM value can be explained in terms of a decreasing density of extended defects with increasing layer thickness [4]. Surface morphology was highly dependent on the growth process.…”

“…The growth of epitaxial layers on large-area substrates, such as GaAs or Si, is an alternative way to achieve the required large area. The heteroepitaxial growth of CdTe on GaAs or Si substrates has been investigated by several researchers in the past using different growth techniques, mainly metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), or hotwall epitaxy (HWE), and epitaxial CdTe layers of high structural properties have already been reported [1][2][3][4]. However, the thickness of the CdTe layers reported is limited to a few microns, or even less, as those layers were mainly investigated as the buffer layer for the HgCdTe growth for the infrared detectors, and are not sufficient for an X-ray detector application.…”

A soft-solution electrochemical processing technique for preparing CdTe/n-Si(100) heterostructures

“…Various growth techniques, such as molecular-beam epitaxy (MBE) [10,12,13], metal/organic chemical vapor deposition (MOCVD) [14][15][16], UHV sublimation [16], metal/organic vapor phase epitaxy (MOVPE) [17] and hot wall epitaxy [18,19] have been used to grow CdTe films onto silicon substrates. Notwithstanding, some problems due to the high temperature growth process are mentioned in the literature.…”

Anisotropy in selective metalorganic vapor phase epitaxy of CdTe on GaAs and Si substrates

“…[1][2][3] Si substrates will eliminate the thermal mismatch problems encountered when a silicon readout chip with signal processing electronics is bonded to detector arrays in hybrid focal plane array technology. Additionally, if high-quality HgCdTe can be grown on Si, then infrared sensors in HgCdTe and the signal processing electronics of the focal plane array can be integrated in the same wafer.…”