Growth of 3C‐SiC nanowires on nickel coated Si(100) substrate using dichloromethylvinylsilane and diethylmethylsilane by MOCVD method

Hyun, Jae-Sung; Nam, Sang-Hun; Kang, Byunghoon; Boo, Jin‐Hyo

doi:10.1002/pssc.200880621

Cited by 10 publications

(6 citation statements)

References 5 publications

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“…It can be observed that the CA increased as the growth temperature and time increased and reached the optimum value of ∼160° for the samples grown at 1200 °C for 1 h. As the formation of SiC takes place via an endothermic reaction, increasing the growth temperature as well as the growth time causes the length as well as the density of 3C-SiC NRs to increase. Best results were observed for the Ni thin-film catalyst as it is a good catalyst for the growth of SiC 1D nanostructures − , compared to other metal catalysts such as Cu and Ti.…”

Section: Resultsmentioning

confidence: 99%

“…Till date, the growth of various 1D 3C-SiC nanostructures such as nanowires (NWs), nanorods (NRs), nanowhiskers, nanobelts, nanoneedles, core–shell NWs, and nanotubes has been reported. The catalytic growth of 1D 3C-SiC nanostructures via vapor–liquid–solid (VLS) mechanism has been mainly achieved by using transition metals especially nickel (Ni) − and iron (Fe). − Some people have also used gold (Au) as a catalyst. , …”

Section: Introductionmentioning

confidence: 99%

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Wetting Behavior of Metal-Catalyzed Chemical Vapor Deposition-Grown One-Dimensional Cubic-SiC Nanostructures

Khan

Huang

et al. 2018

Langmuir

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Superhydrophobic surfaces can be fabricated by using the self-assembled nanoarchitecture of 3C-SiC one-dimensional (1D) nanostructures as they are capable of forming a dense network of micro-nano air pockets without any help from external sources. Herein, the metal-catalyzed growth of 3C-SiC nanowires/nanorods on Si substrates via vapor-liquid-solid mechanism using five different catalysts, that is, chemically synthesized Au nanoparticles and direct current-sputtered thin films of Au, Cu, Ni, and Ti, is reported. Relatively new or unexplored catalysts such as thin films of Cu and Ti, as well as drop-cast Au nanoparticles, were used. An optimized and separate growth was carried out for each catalyst in an inductively heated horizontal cold-wall atmospheric pressure chemical vapor deposition reactor. An insight into the catalytic growth mechanism of 3C-SiC 1D nanostructures has been presented. All of the bare samples exhibited superhydrophilic behavior, whereas hierarchical Au/Pd nanostructure-coated 3C-SiC nanorod samples grown using Au and Ni thin-film catalysts exhibited hydrophobic and superhydrophobic behavior, respectively. As the better results were obtained for Ni thin-film catalysts in terms of growth density and high water contact angle (WCA ≈ 160°), therefore, the growth temperature, as well as the growth time-dependent wetting behavior, was also studied. It was found that the WCA increased as the growth time and temperature increased because of the increase in the growth density, and it finally reached to an optimum value at the growth temperature of 1200 °C and the growth time of 1 h. Furthermore, their wetting behavior was studied by using a variety of high surface tension (water, milk, tea, and glycerin) and low surface tension (organic liquids such as n-hexane, ethanol, etc.) liquids. High surface tension liquids exhibited superhydrophobic behavior, whereas low surface tension liquids exhibited superhydrophilic behavior. Hence, these fabricated nanostructured surfaces can be exploited for oil-water separation, electrowetting, water harvesting, self-cleaning, lab on a chip, and micro-/nanofluidic device applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Wetting Behavior of Metal-Catalyzed Chemical Vapor Deposition-Grown One-Dimensional Cubic-SiC Nanostructures

Khan

Huang

et al. 2018

Langmuir

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“…Films were synthesized using diethylmethylsilane (DEMS) as a single precursor without any carrier or bubbler gas. Use of a single precursor that contain directly bonded Si and C atoms in a ratio of 1:1, and that decomposes at low temperatures may be effective for SiC growth [12]. Si (111) and sapphire (0001) substrates 1.5×1.5 cm in sizde were prepared by chemical cleaning.…”

Section: Methodsmentioning

confidence: 99%

Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD

et al. 2012

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Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. Atomic structure, surface composition and morphology have been investigated by XRD, AES, SEM and AFM analysis. SiC films of 5-7 micron thickness were grown at a rate of ~ 40 nm/min on sapphire (0001) and Si (111) substrates. The films grown at low temperature (850 ºC and 900 ºC) on both substrates show crystalline 3C-SiC in the (111) orientation. XRD results show that the orientation of the crystal structure does not depend of the substrate orientation AFM pictures of SiC films grown on sapphire (0001) exhibit more crystalline order as compared to films grown on the Si (111) substrates. AES of the grown films shows that in both cases the Si peak intensity is greater than that of carbon. This work shows promise for the development of alternative processes for developing low cost, large area substrates for application to IIInitrides LED and UV photodetector fabrication and also for gas detector application.

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“…They can incorporate along with growing metal matrix. Generally used second phase particles are hard oxides [7][8][9][10] Carbides [11,12] , Nitrides [1] , solid lubricants [13], TiB 2 [14] and others include diamond, Al flakes [15], nano rods, nano tubes and nano wires [16].…”

Section: Introductionmentioning

confidence: 99%

EFFECT OF STIRRING RATE ON ELECTROCHEMICAL CODEPOSITION OF Ni-SiC COMPOSITE

et al. 2015

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Nickel-Silicon Carbide (Ni-SiC) composite has been prepared by electrochemical codeposition technique. Nickel sulfamate bath was used along with grain modifier saccharine and cationic surfactant cetyltrimetylammonium bromide (CTAB). The effect of stirring rate was systematically studied and optimized to get well dispersed SiC particles in appropriate amount. Mixed crystalline phase with reinforced [2 1 1] crystal orientation was obtained by XRD analysis. The result revealed that, 250 revolutions per minute (rpm) is optimum stirring rate for the electrochemical codeposition of Ni-SiC. Coating prepared at 250 rpm showed highest microhardness and lowest coefficient of friction with better surface morphology and well distributed nano SiC particles.

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Growth of 3C‐SiC nanowires on nickel coated Si(100) substrate using dichloromethylvinylsilane and diethylmethylsilane by MOCVD method

Cited by 10 publications

References 5 publications

Wetting Behavior of Metal-Catalyzed Chemical Vapor Deposition-Grown One-Dimensional Cubic-SiC Nanostructures

Wetting Behavior of Metal-Catalyzed Chemical Vapor Deposition-Grown One-Dimensional Cubic-SiC Nanostructures

Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD

EFFECT OF STIRRING RATE ON ELECTROCHEMICAL CODEPOSITION OF Ni-SiC COMPOSITE

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