Growth of 3C–SiC on Si(111) using the four-step non-cooling process

Liu, Jui-Min; Chen, Wei-Yu; Hwang, Jiann Yang; Chen, Huang-Chin; Wang, Weilin; Chang, Li

doi:10.1016/j.tsf.2010.05.055

Cited by 7 publications

(5 citation statements)

References 25 publications

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“…In Fig. 20, comparing the SiC selected area diffraction results to those in [11] revealed that the crystal phase was a simple cubic structure and the Miller index was 111, which accords with the relevant literature. The result of the selected area diffraction was veri ed to be β-SiC bers because the β crystal phase was in a simple cubic structure.…”

Section: Sem Analysis Of Sic Berssupporting

confidence: 84%

Application of Electrospinning to SiC Fiber Synthesis

Hu¹,

Dai²,

Wu³

et al. 2020

Preprint

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Silicon carbide (SiC) possesses unique properties and is widely applied in household and military uses. This study explored the manufacturing process of SiC fibers. In the experiment, polycarbosilane (PCS) was dissolved in a mixed solvent of C8H10 and dimethylformamide (DMF) to form a solution, and electrospinning was employed to synthesize PCS fibers. PCS fibers underwent a curing process and a 2-h calcination at 1200°C in N2 atmosphere to convert PCS fibers into β-SiC fibers. The solute recruitment, solvent mixing ratio, and voltage in the experiment were defined as process parameters through which to examine the influence each parameter had on electrospinning. The PCS fibers were discovered to exhibit the most even size under the following condition: PCS recruitment of 1.0 g/ml, DMF constituting 30% of the solvent volume, voltage of 25 kV, spraying speed of 1.0 ml/h, and spinning distance of 15 cm. Under electron microscopy, the diameter of each PCS fiber was determined to be 1.0 μm, and the diameter of each β-SiC fiber was 0.8 μm.

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Section: Sem Analysis Of Sic Berssupporting

confidence: 84%

Application of Electrospinning to SiC Fiber Synthesis

Hu¹,

Dai²,

Wu³

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…The selected area diffraction and the crystal lattice of SiC fibers are displayed in Figure 12, respectively. In Figure 12a, comparing the SiC selected area diffraction results to those in relevant literature [15] revealed that the crystal phase was a simple cubic structure and the Miller index was 111. The result of the selected area diffraction was verified to be β ‐SiC fibers because the β crystal phase was in a simple cubic structure.…”

Section: Resultsmentioning

confidence: 87%

Preparation and Characterization of SiC Fibers from PCS by Electrospinning, Curing and Calcination Process**

Yuan

et al. 2021

ChemistrySelect

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Silicon carbide (SiC) possesses unique properties and is widely applied in household and military uses. This study explored the manufacturing process of SiC fibers. In the experiment, polycarbosilane (PCS) was dissolved in a mixed solvent of C8H10 and dimethylformamide (DMF) to form a solution, and electrospinning was employed to synthesize PCS fibers. PCS fibers underwent a curing process and a 2 h calcination at 1200 °C in N2 atmosphere to convert PCS fibers into β‐SiC fibers. The solute recruitment, solvent mixing ratio, and voltage in the experiment were defined as process parameters through which to examine the influence each parameter had on electrospinning. The PCS fibers were discovered to exhibit the most even size under the following condition: PCS recruitment of 1.0 g/mL, DMF constituting 30 % of the solvent volume, voltage of 25 kV, spraying speed of 1.0 mL/h, and spinning distance of 15 cm. Under microscopy, the diameter of each PCS fiber was determined to be 1.0 μm, and the diameter of each β‐SiC fiber was 0.8 μm.

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“…[37] On the other hand, the stress-free 3C-SiC used is a (111) single-crystal substrate grown by chemical vapor deposition (CVD). [42,43] The Raman peak position of the stress-free 3C-SiC is observed at 797.0 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C‐SiC/Diamond Junctions for Practical Device Processes

Kagawa,

Cheng,

Kawamura

et al. 2023

Small

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Thermal management is critical in contemporary electronic systems, and integrating diamond with semiconductors offers the most promising solution to improve heat dissipation. However, developing a technique that can fully exploit the high thermal conductivity of diamond, withstand high‐temperature annealing processes, and enable mass production is a significant challenge. In this study, the successful transfer of AlGaN/GaN/3C‐SiC layers grown on Si to a large‐size diamond substrate is demonstrated, followed by the fabrication of GaN high electron mobility transistors (HEMTs) on the diamond. Notably, no exfoliation of 3C‐SiC/diamond bonding interfaces is observed even after annealing at 1100 °C, which is essential for high‐quality GaN crystal growth on the diamond. The thermal boundary conductance of the 3C‐SiC‐diamond interface reaches ≈55 MW m−2 K−1, which is efficient for device cooling. GaN HEMTs fabricated on the diamond substrate exhibit the highest maximum drain current and the lowest surface temperature compared to those on Si and SiC substrates. Furthermore, the device thermal resistance of GaN HEMTs on the diamond substrate is significantly reduced compared to those on SiC substrates. These results indicate that the GaN/3C‐SiC on diamond technique has the potential to revolutionize the development of power and radio‐frequency electronics with improved thermal management capabilities.

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Growth of 3C–SiC on Si(111) using the four-step non-cooling process

Cited by 7 publications

References 25 publications

Application of Electrospinning to SiC Fiber Synthesis

Application of Electrospinning to SiC Fiber Synthesis

Preparation and Characterization of SiC Fibers from PCS by Electrospinning, Curing and Calcination Process**

High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C‐SiC/Diamond Junctions for Practical Device Processes

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