Growth of Al on GaAs(001): Observation of interfacial submonolayer structure

For a selenium-treated GaAs (001) surface followed by heat treatment at ∼530 °C, we have observed using field ion scanning tunneling microscopy ordered arrays with regular intervals of 4×periodicity in the [1̄10] direction (1.6 nm) to line up in the [110] direction. These ordered arrays are in good agreement with the 4×1 structure previously observed by other methods. In a closer view, the 4×structure was found to be formed by closely placed double rows.

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Surface structure of selenium-treated GaAs (001) studied by field ion scanning tunneling microscopy

Shigekawa

Hashizume

Oigawa

et al. 1991

Applied Physics Letters

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Growth of (100) Al/Fe and Fe/Al/Fe layers using the technique of metal-metal epitaxy on silicon

Chang

1990

Journal of Applied Physics

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Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits

Tournet

Gosselink

Miao

et al. 2016

Supercond. Sci. Technol.

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The quest for a universal quantum computer has renewed interest in the growth of superconducting materials on semiconductor substrates. High-quality superconducting thin films will make it possible to improve the coherence time of superconducting quantum bits (qubits), i.e., to extend the time a qubit can store the amplitude and phase of a quantum state. The electrical losses in superconducting qubits highly depend on the quality of the metal layers the qubits are made from. Here, we report on the epitaxy of single-crystal Al (011) layers on GaAs (001) substrates. Layers with 110 nm thickness were deposited by means of molecular beam epitaxy at low temperature and monitored by in situ reflection high-energy electron diffraction performed simultaneously at four azimuths. The single-crystal nature of the layers was confirmed by ex situ high-resolution x-ray diffraction. Differential interference contrast and atomic force microscopy analysis of the sample’s surface revealed a featureless surface with root mean square roughness of 0.55 nm. A detailed in situ study allowed us to gain insight into the nucleation mechanisms of Al layers on GaAs, highlighting the importance of GaAs surface reconstruction in determining the final Al layer crystallographic orientation and quality. A highly uniform and stable GaAs (001)- reconstruction reproducibly led to a pure Al (011) phase, while an arsenic-rich GaAs (001)- reconstruction yielded polycrystalline films with an Al (111) dominant orientation. The near-atomic smoothness and single-crystal character of Al films on GaAs, in combination with the ability to trench GaAs substrates, could set a new standard for the fabrication of superconducting qubits.

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Growth of Al on GaAs(001): Observation of interfacial submonolayer structure

Cited by 5 publications

References 32 publications

Surface structure of selenium-treated GaAs (001) studied by field ion scanning tunneling microscopy

Surface structure of selenium-treated GaAs (001) studied by field ion scanning tunneling microscopy

Growth of (100) Al/Fe and Fe/Al/Fe layers using the technique of metal-metal epitaxy on silicon

Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits

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