No abstract

No abstract

Articles you may be interested inUltrahigh-speed etching of organic films using microwave-excited nonequilibrium atmospheric-pressure plasma J. Appl. Phys. 98, 043311 (2005); 10.1063/1.2030409 Magnetic metal etching with organic based plasmas. I. C O ∕ H 2 plasmasThe chemical processes that underlie metal etching in high-density CO/ NH 3 plasmas have been investigated using supersonic pulse, plasma sampling mass spectrometry. The chemical processes have been found to be consistent with Fischer-Tropsch chemistry resulting in the generation of formamide in the plasma environment. Formamide, closely related to acetic acid in both chemical structure and ligand binding capabilities, is suggested as being responsible for the two and one-half-fold increase in etch rate previously observed ͓K.. Technol. A 17͑2͒, 535 ͑1999͔͒ when small amounts of CO are added to NH 3 plasmas.

No abstract

The chemical compositions of 4% carbon in hydrogen/deuterium electron cyclotron resonance (ECR) microwave plasmas based on ethane, ethylene, acetylene, and methane, as determined by supersonic pulse, plasma sampling mass spectrometry, have been kinetically modeled using only a steady-state concentration of hydrogen to represent the role of the plasma. Using 375 isotopically labeled chemical steps based on 54 reversible neutral molecule chemical reactions, simulated spectra were generated that matched all eight experimental spectra using only literature values of the kinetic and energetic constants and three physically reasonable fitted parameters that were held constant for all eight simulations. The success of the modeling provides strong evidence that the chemistry of ECR-microwave plasmas is dominated by neutral molecule reactions.