Articles you may be interested inUltrahigh-speed etching of organic films using microwave-excited nonequilibrium atmospheric-pressure plasma J. Appl. Phys. 98, 043311 (2005); 10.1063/1.2030409 Magnetic metal etching with organic based plasmas. I. C O ∕ H 2 plasmasThe chemical processes that underlie metal etching in high-density CO/ NH 3 plasmas have been investigated using supersonic pulse, plasma sampling mass spectrometry. The chemical processes have been found to be consistent with Fischer-Tropsch chemistry resulting in the generation of formamide in the plasma environment. Formamide, closely related to acetic acid in both chemical structure and ligand binding capabilities, is suggested as being responsible for the two and one-half-fold increase in etch rate previously observed ͓K.. Technol. A 17͑2͒, 535 ͑1999͔͒ when small amounts of CO are added to NH 3 plasmas.

The chemical processes within high-density CO∕H2 plasmas are examined using supersonic pulse, plasma sampling mass spectrometry. The principle chemistry observed is consistent with a Fischer–Tropsch process and results in the formation of primarily formic acid and a C2O2Hx species tentatively identified as ethenediol. The high-density plasmas used are shown to etch nickel.