Magnetic metal etching with organic based plasmas. I. CO∕H2 plasmas

Orland, A. S.; Blumenthal, Rik

doi:10.1116/1.1935530

Cited by 2 publications

(4 citation statements)

References 23 publications

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“…5 Finally, shoulders appear on either side of m / z = 80, implying that this peak is more than simply Ar 2 . These are the remaining intensity of the ͑NH 3 ͒ 3 H + cluster that dominated the flow spectra.…”

Section: B Plasma Mass Spectramentioning

confidence: 98%

“…In the CO/ H 2 investigation, 5 Fischer-Tropsch chemistry 15 was proposed as the source of the formic acid and enthanediol. In industrial Fischer-Tropsch processes, a mixture of hydrogen and carbon monoxide is reacted in the presence of an iron, cobalt, or nickel catalyst.…”

Section: B Plasma Mass Spectramentioning

confidence: 99%

“…5 The analysis of the data in this chapter and the conclusions about the etch mechanism rely heavily upon those results. The actual mechanism was not readily apparent until the simplified system of CO/ H 2 plasmas was studied.…”

Section: Introductionmentioning

confidence: 99%

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Metal etching with organic based plasmas. II. CO∕NH3 plasmas

Orland

Blumenthal

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inUltrahigh-speed etching of organic films using microwave-excited nonequilibrium atmospheric-pressure plasma J. Appl. Phys. 98, 043311 (2005); 10.1063/1.2030409 Magnetic metal etching with organic based plasmas. I. C O ∕ H 2 plasmasThe chemical processes that underlie metal etching in high-density CO/ NH 3 plasmas have been investigated using supersonic pulse, plasma sampling mass spectrometry. The chemical processes have been found to be consistent with Fischer-Tropsch chemistry resulting in the generation of formamide in the plasma environment. Formamide, closely related to acetic acid in both chemical structure and ligand binding capabilities, is suggested as being responsible for the two and one-half-fold increase in etch rate previously observed ͓K.. Technol. A 17͑2͒, 535 ͑1999͔͒ when small amounts of CO are added to NH 3 plasmas.

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Section: B Plasma Mass Spectramentioning

confidence: 98%

Section: B Plasma Mass Spectramentioning

confidence: 99%

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Metal etching with organic based plasmas. II. CO∕NH3 plasmas

Orland

Blumenthal

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

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“…Until now, studies have shown that Cl-based plasmas are good candidates for metal etching. Organic plasma mixtures can etch some metals, by pure ion bombardment processes or, in some cases, by forming volatile organometallic compounds, with CH 4 or C 3 H 6 O plasmas for example [21][22][23].…”

Section: Literature Overviewmentioning

confidence: 99%

Etching of iron and iron–chromium alloys using ICP-RIE chlorine plasma

Dain¹,

Laourine²,

Guilet³

et al. 2021

Plasma Sources Sci. Technol.

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The dry etching process of Fe, Cr and Fe-Cr alloys under a chlorine-based plasma is studied. The objective is to create new surface functionalities. The approach combines an experimental study of an ICP (Inductively Coupled Plasma) reactor with the development of a multi-scale etching model including kinetic, sheath and surface models. The results from plasma etching of substrates made of Fe, Cr and Fe-Cr alloys are presented. Optical emission spectroscopy and interferometry measurements show strong modifications of the plasma when Fe or Cr samples are present in the reactor. It is shown that Fe is easier to etch than Cr. The study highlights the role of chemical etching by the formation of volatile products such as FeCl 3 . The Cr content in Fe-Cr alloys has a strong impact on both the lateral and vertical etch rates, as well as on the roughness along the profile. For Fe-Cr alloys, the experimental and calculated values of etch rate are very similar. The concept of hard zones is introduced to get a better agreement between simulation results and experimental ones. This good agreement demonstrates the capability of the developed simulator to implement new phenomena.

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Magnetic metal etching with organic based plasmas. I. CO∕H2 plasmas

Cited by 2 publications

References 23 publications

Metal etching with organic based plasmas. II. CO∕NH3 plasmas

Metal etching with organic based plasmas. II. CO∕NH3 plasmas

Etching of iron and iron–chromium alloys using ICP-RIE chlorine plasma

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