Growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition

Zhou, Jiang‐Huai; Ikuta, Kazuyuki; Yasuda, Tetsuji; Umeda, T.; Yamasaki, Satoshi; Tanaka, Kazunobu

doi:10.1063/1.119958

Cited by 48 publications

(29 citation statements)

References 10 publications

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“…When mc-Si:H thin films are deposited at low temperature either by PECVD or HWCVD, an amorphous incubation layer is formed in the initial stage of the film growth on a glass substrate, until the microcrystalline structure sets in [6,7]. Since this amorphous incubation layer is harmful to the electric properties, intensive researches have been conducted to reduce or eliminate such an amorphous incubation layer in the initial growth stage [8][9][10]. Heya et al [9] suggested a two-step deposition method, where an amorphous incubation layer could be eliminated by changing hydrogen dilution during deposition.…”

Section: Introductionmentioning

confidence: 99%

Reduction of amorphous incubation layer by HCl addition during deposition of microcrystalline silicon by hot-wire chemical vapor deposition

Chung¹,

Lee²,

Lim³

et al. 2011

Solar Energy Materials and Solar Cells

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Section: Introductionmentioning

confidence: 99%

Reduction of amorphous incubation layer by HCl addition during deposition of microcrystalline silicon by hot-wire chemical vapor deposition

Chung¹,

Lee²,

Lim³

et al. 2011

Solar Energy Materials and Solar Cells

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“…It has been confirmed that H based ions etch away weak/strained Si-Si bonds to prevent a-Si formation. [18][19][20] Electrode Spacing and Pressure The incident ion is implanted into the subsurface. Case C: Extra energy of an ion enhances the surface diffusion, which allows the ion or other surface species to immigrate with a larger distance before it gets stuck to a surface site or stopped by following incoming species.…”

Section: D104mentioning

confidence: 99%

Improvement of PECVD Silicon–Germanium Crystallization for CMOS Compatible MEMS Applications

Guo

Severi

Bryce

et al. 2010

J. Electrochem. Soc.

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This paper investigates the influence of the electrode spacing, chamber pressure, total gas flow, and H 2 dilution on the crystallinity, resistivity, uniformity, and stress of polycrystalline silicon-germanium ͑poly-SiGe͒ films grown by plasma-enhanced chemical vapor deposition ͑PECVD͒. Boron-doped PECVD SiGe films of 1.6 m thick are deposited on 400 nm chemical vapor deposition layers from SiH 4 , GeH 4 , and B 2 H 6 precursors. The microstructure is verified by transmission electron microscopy and by X-ray diffraction. It was discovered that for constant temperature and deposition rate, the PECVD SiGe microstructure changes from completely amorphous to polycrystalline by increasing the electrode spacing and pressure due to reduced ion bombardment. A process window of an electrode spacing and pressure for the PECVD poly-SiGe deposition is thus identified based on a sheet resistance mapping method. Increasing the total gas flow dramatically improves the within-wafer crystallinity variation and further reduces the resistivity. Increasing the H 2 flow during PECVD shifts the stress from −51 to 17 MPa and further reduces the crystallinity variation over the wafer. In addition, the effect of changing the SiH 4 to GeH 4 ratio and the in situ boron doping by adding B 2 H 6 is also investigated. The findings in this paper are expected to facilitate the use of poly-SiGe in the above complementary metal oxide semiconductor ͑CMOS͒ microelectromechanical system ͑MEMS͒ applications.Polycrystalline silicon-germanium ͑poly-SiGe͒ has been demonstrated to be an excellent material for the fabrication of integrated microsystems in an above complementary metal oxide semiconductor ͑CMOS͒ microelectromechanical system ͑MEMS͒ approach. 1-3 Poly-SiGe has the mechanical and electrical properties similar to polysilicon but can be deposited and crystallized at low temperatures ͑e.g., 450°C for CMOS compatible applications͒. At the same time, poly-SiGe has a relatively high stiffness value ͑around 140 GPa for 60-70 atom % Ge 4 ͒.The deposition rate ͑DR͒ of poly-SiGe can be significantly enhanced by utilizing plasma-enhanced chemical vapor deposition ͑PECVD͒. 5 A typical DR of poly-SiGe deposited using chemical vapor deposition ͑CVD͒ is around 0.6 nm/s after the incubation period, whereas the DR of PECVD deposited poly-SiGe is around 2.3 nm/s and there is no or minimal incubation time. 6 PECVD is therefore the most promising technology in commercializing polySiGe for MEMS applications, where many thick structural/capping layers ͑4-10 m͒ are commonly used. To ensure a good crystalline growth, the bulk PECVD layer is deposited on top of a thin CVD SiGe layer. With this technique, the crystalline grains that form in the slowly grown CVD layer continue up to the PECVD layer. 6 In the meantime, this CVD layer, typically 400 nm, can also be used for the anchor filling of the surface micromachined MEMS structures, where a highly conformal deposition is preferred. The polySiGe films in this paper thus always start with a CVD grown layer.However, di...

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“…Normally, the formation of the amorphous incubation layer in the low-temperature process mainly comes from the ion bombardment to the growing surface. To reduce or eliminate the amorphous incubation layer, some proposals were made such as using a triode configuration of CCP [25], two-step growth [26] while they would make the deposition system more complicated or prolong the preparation duration. Different from the conventional CCP sources, as a relatively new plasma source, inductively coupled plasma (ICP) shows some advantages in crystalline silicon film deposition because of the low plasma potential, low electron temperature, high electron density ($10 12 cm À3 at 10 mTorr), spatial confinement of discharge and the simplicity of the configuration [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Highly crystallized silicon films grown on glass without amorphous incubation layers by inductively coupled plasma chemical vapor deposition

Wang

Yin

et al. 2008

Journal of Crystal Growth

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Growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition

Cited by 48 publications

References 10 publications

Reduction of amorphous incubation layer by HCl addition during deposition of microcrystalline silicon by hot-wire chemical vapor deposition

Reduction of amorphous incubation layer by HCl addition during deposition of microcrystalline silicon by hot-wire chemical vapor deposition

Improvement of PECVD Silicon–Germanium Crystallization for CMOS Compatible MEMS Applications

Highly crystallized silicon films grown on glass without amorphous incubation layers by inductively coupled plasma chemical vapor deposition

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