Growth of Au-catalyzed ordered GaAs nanowire arrays by molecular-beam epitaxy

Wu, Zhanghua; Mei, Xiangyang; Kim, D.; Blumin, M.; Ruda, Harry E.

doi:10.1063/1.1532772

Cited by 167 publications

(104 citation statements)

References 20 publications

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“…The NWs are preferred to grow along the [111] direction in the case of ZB phase and along the [0001] in the case of WZ. Subsequently, the Aucatalyzed VLS method was successfully used to grow III-V NWs by other techniques, including molecular beam epitaxy (MBE) [63,64] and chemical beam epitaxy (CBE) [65,66].…”

Section: Nw Growth Mechanismsmentioning

confidence: 99%

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

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This thesis deals with the growth of GaAs nanowires (NWs) by molecular beam epitaxy (MBE) using vapor-liquid-solid method on various substrates including GaAs(111)B, Si(111) and graphene. The growth of the NWs on GaAs substrates was carried out by Au-catalyzed technique, whereas the growths on Si and graphene substrates were carried out using self-catalyzed technique that has been the main focus of this thesis. The long-term goal of this work was to produce p-n radial junction GaAs NWs for solar cell applications.Necessary conditions were established for obtaining vertical self-catalyzed GaAs NWs on Si(111), which is reproducible from run-to-run. One of the major issues in these NWs grown by both Au-and self-catalyzed techniques is their crystal structure. The Au-catalyzed GaAs NWs usually adopt a wurtzite (WZ) crystal phase, whereas the self-catalyzed NWs a zinc blende (ZB) phase. However, in both the cases the NWs contain stacking faults, rotational twins or/and a mixed crystal phase. The ZB and WZ phases show different optical properties, and one phase might be favored over other for certain applications. Therefore the crystal phase was controlled within single NWs by tuning the V/III ratio and introducing GaAsSb inserts. The change of the crystal phases was correlated with the change in the contact angle of the Ga droplet.Since the discovery of graphene, an ultra-thin two-dimensional material, the research on graphene has become an active field in recent years due to its remarkable properties including excellent electrical and thermal conductivities, mechanical strength and flexibility, and optical transparency. By growing the semiconductor NWs on graphene, a completely new hybrid system can be envisioned where the unique properties of both NWs and graphene can be utilized. Therefore we established a method for the growth of semiconductor NWs on graphene by demonstrating epitaxial growth of vertical GaAs and InAs NWs on different graphitic substrates.Core-shell heterostructure, doping, optical properties, and position controlled growth of self-catalyzed GaAs NWs were investigated. Growth of GaAs/GaAsSb coreshell NWs where the Sb content was tuned from about 10% -70% was studied. The effect of growth temperature and the Sb flux on the morphology of GaAsSb shell was investigated. In addition, by utilizing the core-shell geometry where the shell copies the crystal phase of the core, WZ phase of GaAsSb was demonstrated. Successful p-type doping of GaAs core using Be as dopant, and n-type doping of GaAs shell using Si and Te as dopants were achieved. To investigate the optical properties, GaAs/AlGaAs coreshell NWs were grown with different V/III ratios during the core growth. The NWs grown with high V/III ratio, despite containing a higher density of twinned ZB and WZ GaAs with SFs, were found to have superior optical quality as compared to the NWs grown with low V/III ratio that contain pure ZB GaAs. The observed V/III ratio dependent optical quality was correlated to the intrinsic defects such as As vac...

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Section: Nw Growth Mechanismsmentioning

confidence: 99%

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

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“…For NW growth in combination with molecular beam epitaxy (MBE) most often gold is used as catalyst [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

Bauer¹,

Rudolph²,

Soda³

et al. 2010

Nanotechnology

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GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO 2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.

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“…Since that time, this method has been investigated, analyzed and improved by several groups [12,17,18,19,20]. The VLS method can be implemented with several growth techniques such as vapor phase epitaxy (VPE) [16,17], laser ablation [19], metal-organic vapor phase epitaxy (MOVPE) [18], chemical beam epitaxy (CBE) [12], and molecular beam epitaxy (MBE) [20].…”

Section: Nanowire Growthmentioning

confidence: 99%

Potential of semiconductor nanowires for single photon sources

et al. 2009

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The catalyst-assisted growth of semiconductor nanowires heterostructures offers a very flexible way to design and fabricate single photon emitters. The nanowires can be positioned by organizing the catalyst prior to growth. Single quantum dots can be formed in the core of single nanowires which can then be easily isolated and addressed to generate single photons. Diameter and height of the dots can be controlled and their emission wavelength can be tuned at the optical telecommunication wavelengths by the material composition. The final morphology of a wire can be shaped by the radial/axial growth ratio, offering the possibility to form single mode optical waveguides with a tapered end for efficient photon collection.

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Growth of Au-catalyzed ordered GaAs nanowire arrays by molecular-beam epitaxy

Cited by 167 publications

References 20 publications

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

Potential of semiconductor nanowires for single photon sources

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