Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Keller, S.; Keller, B.P.; Kapolnek, D.; Mishra, Umesh K.; DenBaars, Steven P.; Shmagin, I. K.; Kolbas, R. M.; Krishnankutty, S.

doi:10.1016/s0022-0248(96)00553-2

Cited by 71 publications

(57 citation statements)

References 8 publications

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“…The indium incorporation was found to be significantly influenced by the amount of hydrogen flowing into the reactor. The increased In incorporation at high growth rates was reported by Keller et al [5] and Sohmer et al [7].…”

Section: Introductionsupporting

confidence: 54%

“…Another phenomena which can influence the indium incorporation mechanisms is the frequently observed formation of In droplets on the surface [5], [19]. Keller et al [5] found that the appearance of the droplets is strongly affected by NH 3 /TMIn ratio and growth temperature, and droplets were expected to appear at the surface for high indium content in the gas phase.…”

Section: Modeling Of Ingan Growth In Aix 200 Reactormentioning

confidence: 99%

“…Keller et al [5] found that the appearance of the droplets is strongly affected by NH 3 /TMIn ratio and growth temperature, and droplets were expected to appear at the surface for high indium content in the gas phase. More detailed experimental studies are necessary to clarify whether the In droplet formation is important for our experimental conditions.…”

Section: Modeling Of Ingan Growth In Aix 200 Reactormentioning

confidence: 99%

“…Experimental studies ( [4], [5]) reveal the dependence of indium content in InGaN on growth temperature as well as on In/ (In+Ga) ratio in the gas phase. There was pointed out that the character of these dependencies was more complicated in comparison with the case of other III-V alloys when the indium incorporation into the growing layer is mainly determined by its content in the gas phase.…”

Section: Introductionmentioning

confidence: 99%

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Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

Талалаев

Yakovlev²,

Karpov³

et al. 1999

MRS Internet j. nitride semicond. res.

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Multiwafer Planetary Reactor is a promising system for large-scale production of heterostructures for LED's based on III-group nitrides. Analysis of chemical processes occurring in the reactor allows one to get insight into specific mechanisms governing growth of nitride based heterostructures. In the present paper results of modeling analysis of MOVPE of In x Ga 1-x N layers in AIX-200 Reactor and AIX 2000 HT Planetary Reactor are reported. The model used for MOVPE process analysis accounts for gas flow, heat transfer, and multicomponent mass transport along with gas phase and surface chemical reactions. Results of the modeling analysis of In transport and incorporation into the solid phase are compared with experimental data. It is shown that the model predicts reasonably well the In incorporation during MOVPE of InGaN under In/(In+Ga) ratio in the gas phase less than 20%.

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Section: Introductionsupporting

confidence: 54%

Section: Modeling Of Ingan Growth In Aix 200 Reactormentioning

confidence: 99%

Section: Modeling Of Ingan Growth In Aix 200 Reactormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

Талалаев

Yakovlev²,

Karpov³

et al. 1999

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

show abstract

“…Growth parameters such as growth temperature, growth rate, and flux ratio are seen to drastically affect the indium incorporation in InGaN films. During growth of the InGaN alloys, the evaporation of indium species from the surface will be suppressed at lower temperatures and leads to higher growth rates as the indium species become trapped by the growing layer [69,70]. As the indium content in the InGaN alloy increases, the material quality degrades due to phase separation, inhomogeneity of solid solution, and indium metal droplets.…”

Section: Nonpolar Ingan/gan Heterostructuresmentioning

confidence: 99%

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Roul¹,

Chandan²,

Mukundan³

et al. 2018

Epitaxy

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III-Nitride-based heterostructures are well suited for the fabrication of various optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs), high-power/-high-frequency field-effect transistors (FETs), and tandem solar cells because of their inherent properties. However, the heterostructures grown along polar direction are affected by the presence of internal electric field induced by the existence of intrinsic spontaneous and piezoelectric polarizations. The internal electric field is deleterious for optoelectronic devices as it causes a spatial separation of electron and hole wave functions in the quantum wells, which thereby decreases the emission efficiency. The growth of III-nitride heterostructures in nonpolar or semipolar directions is an alternative option to minimize the piezoelectric polarization. The heterostructures grown on these orientations are receiving a lot of focus due to their potential improvement on the efficiency of optoelectronic devices. In the present chapter, the growth of polar and nonpolar III-nitride heterostructures using molecular beam epitaxy (MBE) system and their characterizations are discussed. The transport properties of the III-nitride heterostructure-based Schottky junctions are also included. In addition, their applications toward UV and IR detectors are discussed.

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Optical and Structural Studies of Phase Separation in InGaN Film Grown by MOCVD

Youngjoo¹,

Kim²,

Song³

et al. 1999

phys. stat. sol. (b)

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We have studied the effects of growth temperature, film thickness, and Si doping on the phase separation in InGaN films grown by metalorganic chemical vapor deposition. As the growth temperature decreased, the band-edge photoluminescence peak became splitted due to the In composition fluctuation in the InGaN film and finally separated into two discrete peaks corresponding to the epitaxial InGaN and InN-rich phase. The size and the In content of the spinodally-formed InN-rich regions increased with increasing InGaN film thickness. The Si doping was found to suppress the composition fluctuation and the In incorporation in InGaN films.

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Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Cited by 71 publications

References 8 publications

Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications

Optical and Structural Studies of Phase Separation in InGaN Film Grown by MOCVD

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