Growth of c-axis oriented AlN thin films on titanium alloy substrate by middle frequency magnetron sputtering

Jiang, Jianying; Peng, Bin; Zhang, Wanli; Wang, Yu; Shu, Lin; Wang, Rui

doi:10.1116/1.4922341

Cited by 8 publications

(7 citation statements)

References 27 publications

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“…From the above results, it can be concluded that the quality of the AlN film is an important factor in affecting the performance of the SAW devices. To explore the effects of the FWHM of the AlN films on the characteristics of the AlN/TC4 SAW devices, we prepared AlN films on the TC4 substrate with different FWHMs by changing the ratio of depositing time at the first and second steps, while the total thickness was fixed to 2.5 μm [ 14 ]. The dependence of the Q-factor and k 2 on the FWHM of AlN films is presented in Figure 9 .…”

Section: Resultsmentioning

confidence: 99%

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The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures

Shu

Peng

et al. 2016

Sensors

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We report in this paper on the study of surface acoustic wave (SAW) resonators based on an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses of AlN films was simulated, and the acoustic propagating modes were discussed. Based on the simulation results, interdigital transducers with a periodic length of 24 μm were patterned by lift-off photolithography techniques on the AlN films/TC4 structure, while the AlN film thickness was in the range 1.5–3.5 μm. The device performances in terms of quality factor (Q-factor) and electromechanical coupling coefficient (k2) were determined from the measure S11 parameters. The Q-factor and k2 were strongly dependent not only on the normalized AlN film thickness but also on the full-width at half-maximum (FWHM) of AlN (002) peak. The dispersion curve of the SAW phase velocity was analyzed, and the experimental results showed a good agreement with simulations. The temperature behaviors of the devices were also presented and discussed. The prepared SAW resonators based on AlN/TC4 structure have potential applications in integrated micromechanical sensing systems.

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Section: Resultsmentioning

confidence: 99%

“…A two-step deposition process was used to deposit AlN films onto the TC4 substrate. The growth process is studied in [ 14 ] in detail. By controlling the deposition time, the thickness of the AlN film was adjusted from 1.5 μm to 3.5 μm, yielding a t AlN /λ from 0.0625 to 0.1458.…”

Section: Fabricationmentioning

confidence: 99%

The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures

Shu

Peng

et al. 2016

Sensors

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“…High purity N 2 (99.999%) and Ar (99.999%) were injected into the chamber. A so-called two-step deposition technique [ 13 ] was used. Firstly, the AlN films were deposited for 30 min and the substrates temperature was fixed at 400 °C.…”

Section: Methodsmentioning

confidence: 99%

“…The total sputtering time was 2 h and the thickness of the AlN films was about 3 μm. This two-step deposition process was proposed in reference [ 13 ] in detail. Si (100) substrates were also used to deposit AlN films in every sputtering process for comparison.…”

Section: Methodsmentioning

confidence: 99%

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Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique

et al. 2016

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AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y2O3 films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N2/Ar flow rate and sputtering pressure on the microstructure of the AlN thin films were systematically investigated. The results show that the dependency of the full width at half maximum (FWHM) of AlN/Y2O3/Hastelloy on the sputtering parameters is similar to that of AlN/Si (100). The FWHM of the AlN (002) peak of the prepared AlN films decreases with increasing sputtering power. The FWHM decreases with the increase of the N2/Ar flow rate or sputtering pressure, and increases with the further increase of the N2/Ar flow rate or sputtering pressure. The FWHM of the AlN/Y2O3/Hastelloy prepared under optimized parameters is only 3.7° and its root mean square (RMS) roughness is 5.46 nm. Based on the experimental results, the growth mechanism of AlN thin films prepared by the two-step deposition process was explored. This work would assist us in understanding the AlN film’s growth mechanism of the two-step deposition process, preparing highly c-axis–oriented AlN films on flexible metal tapes and developing flexible surface acoustic wave (SAW) sensors from an application perspective.

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Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering

Chauhan

Joglekar

Manhas

2018

Journal of Elec Materi

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Growth of c-axis oriented AlN thin films on titanium alloy substrate by middle frequency magnetron sputtering

Cited by 8 publications

References 27 publications

The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures

The Characterization of Surface Acoustic Wave Devices Based on AlN-Metal Structures

Effects of Sputtering Parameters on AlN Film Growth on Flexible Hastelloy Tapes by Two-Step Deposition Technique

Influence of Process Parameters and Formation of Highly c-Axis Oriented AlN Thin Films on Mo by Reactive Sputtering

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