Growth of concentrated GaInSb alloys with improved chemical homogeneity at low and variable pulling rates

Stelian, Carmen; Duffar, T.; Mitric, A.; Corregidor, V.; Alves, L.C.; Barradas, N.P.

doi:10.1016/j.jcrysgro.2005.05.059

Cited by 11 publications

(8 citation statements)

References 13 publications

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“…In melt growth technologies, solute or impurity segregation often represents an important issue, e.g. for the control of solidification in concentrated semiconductor alloys [1] or for the purification of upgraded metallurgical grade Si feedstock in photovoltaic applications [2]. For such an issue, the role of both Fickian diffusion and convection has been widely recognized in the past, but a global understanding is still missing.…”

Section: Introductionmentioning

confidence: 99%

On the effect of natural convection on solute segregation in the horizontal Bridgman configuration: Convergence of a theoretical model with numerical and experimental data

Kaddeche

Garandet

Henry

et al. 2015

Journal of Crystal Growth

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International audienceThe effect of natural convection on solute segregation in the horizontal Bridgman configuration is studied. The objective is to check whether a single non-dimensional number, based on the fluid flow induced interface shear stress, is able to capture the physics of the mass transport phenomena. A number of heat and mass transfer numerical simulations are carried out in the laminar convection regime, and the segregation results are found to be in good agreement with the predictions of the scaling analysis. At the higher convective levels relevant for the comparison with existing experimental data, a direct computation of the segregation phenomena is not possible, but numerical simulations accounting for turbulence modeling can provide the interface shear stress. With this procedure, a good agreement between the experimentally measured segregation and the predictions of the scaling analysis is again observed, thus validating the choice of the interface shear stress as a key parameter for the segregation studies

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Section: Introductionmentioning

confidence: 99%

On the effect of natural convection on solute segregation in the horizontal Bridgman configuration: Convergence of a theoretical model with numerical and experimental data

Kaddeche

Garandet

Henry

et al. 2015

Journal of Crystal Growth

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“…If the In 0.6 Ga 0.4 Sb crystal is to be grown, the temperature is kept for 42.37 h, and then it decreases at a rate of 0.33 1C/h. [18,19]. They demonstrated that alternating magnetic field improved the radial segregation.…”

Section: Resultsmentioning

confidence: 99%

Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed

Murakami¹,

Hikida²,

Konno³

et al. 2008

Journal of Crystal Growth

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The paper describes the method to grow homogeneous In x Ga 1Àx Sb ternary alloy bulk crystals. The In x Ga 1Àx Sb crystals were grown under a constant temperature gradient using InSb(seed)/Te-doped InSb/GaSb(feed) samples. The optimum cooling rate to grow homogeneous crystal was given by the product of the temperature gradient and the growth rate. The temperature gradient was estimated from the indium composition profile in the grown crystal. The thermal pulses were applied during the holding process to estimate the growth rate. The respective growth rates were 0.45 and 0.19 mm/h for indium compositions of 0.8 and 0.6. The homogeneous In 0.8 Ga 0.2 Sb and In 0.6 Ga 0.4 Sb crystals were grown by decreasing the temperature with an optimized cooling rate of 0.77 and 0.33 1C/h, respectively.

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“…These phenomena have been numerically explained in Refs. [9,10] by taking into account the damping solutal effect on the melt convection. From the numerical modeling it was found that the damping of the convection depends on the radial segregation, e.g.…”

Section: Modeling Of High Doped Gasb:in Crystals Growth With Baffle Umentioning

confidence: 99%

“…The numerical analysis will be extended to the growth of concentrated semiconductor alloys under terrestrial conditions. Previous ground-based experimental and numerical investigations of the higher doped crystals grown by using the vertical Bridgman method have shown huge chemical segregations and interface curvatures due to the damping solutal effect on the melt convection [7][8][9][10]. In this paper, the baffle effect on the chemical homogeneity of higher doped GaInSb crystals will be numerically investigated.…”

Section: Introductionmentioning

confidence: 99%

Growth of concentrated GaInSb alloys with improved chemical homogeneity at low and variable pulling rates

Cited by 11 publications

References 13 publications

On the effect of natural convection on solute segregation in the horizontal Bridgman configuration: Convergence of a theoretical model with numerical and experimental data

On the effect of natural convection on solute segregation in the horizontal Bridgman configuration: Convergence of a theoretical model with numerical and experimental data

Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed

Numerical modeling of the semiconductor alloys solidification by using a baffle under microgravity and terrestrial conditions

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