Growth of coprus chloride single crystals for optical modulators

High Conductivity Cuprous Halide‐Metal Halide Systems

“…The present data on polycrystalline CuC1 are in good agreement with the data reported previously on single crystals (14,15) and on polycrystals (16) at high temperatures (the intrinsic region). However, at low temperatures, our conductivities are higher than the previous data on single crystals (I4, 17). This discrepancy may be attributed to grain boundaries or to impurities.…”

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates

“…This is due to the fact that excess Cu + interstitial ions and Cu vacancies are consumed by the reversible nature of the Cu electrodes. A total conductivity of 6.5 × 10 −7 S cm −1 was obtained from the slope of the I -V data of figure 6, which is comparable to a value of the order of 10 −8 S cm −1 obtained for bulk CuCl samples [46,47].…”

Structural, optical and electrical properties of Co‐evaporated CuCl/KCl films

“…Thus it is possible that the K + hops from one interstitial position to another thereby increasing the electrical conductivity of the films. The increase in the electrical conductivity of the co-evaporated CuCl/KCl films is in good agreement with previous work on the bulk growth of CuCl from melt using KCl [8,10]. On the other hand the addi-tional Clfrom the KCl atoms man fill some of the anion vacancies in the lattice.…”

“…However despite the large free excitonic binding energy of CuCl, the luminescence intensities appear to be weak when compared to mature optical emitters such as GaAs or GaN for which consistent high quality room temperature electroluminescence, spontaneous emission and lasing could be demonstrated. Various metal chlorides such as RbCl, SrCl 2 , BaCl 2 PbCl 2 and KCl have been used previously to grow bulk CuCl from the melt [8][9][10] in order to prevent the formation of the wurtzite structure, since CuCl transforms from the zincblende structure to the wurtzite structure at ~ 407 o C before melting at ~ 422 o C. In order to improve the luminescence quality of CuCl films, we have investigated the…”

“…However despite the large free excitonic binding energy of CuCl, the luminescence intensities appear to be weak when compared to mature optical emitters such as GaAs or GaN for which consistent high quality room temperature electroluminescence, spontaneous emission and lasing could be demonstrated. Various metal chlorides such as RbCl, SrCl 2 , BaCl 2 PbCl 2 and KCl have been used previously to grow bulk CuCl from the melt [8][9][10] in order to prevent the formation of the wurtzite structure, since CuCl transforms from the zincblende structure to the wurtzite structure at ~ 407 o C before melting at ~ 422 o C. In order to improve the luminescence quality of CuCl films, we have investigated the The behaviour of co-evaporated CuCl/KCl films, with a varying weight percentage of KCl from 0% -15%, has been investigated using structural, optical and electrical characterisation techniques. Room temperature X-ray diffraction (XRD) measurements reveal that the deposited films on glass substrates were zincblende in structure and preferentially oriented in the CuCl (111) plane irrespective of the percentage of KCl.…”