Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure

Abstract

Kinetics of Ge growth at low temperature on Si (001) by ultrahigh vacuum chemical vapor deposition J. Appl. Phys. 97, 064907 (2005); 10.1063/1.1854723 Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor: Study of their structural properties Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition J. Appl. Phys. 95, 7908 (2004); 10.1063/1.1728311Epitaxial growth of cubic SiC thin films on silicon using single molecular precursors by metalorganic chemical vapor depositionWe have deposited cubic SiC thin films on Si͑001͒ substrates by high vacuum chemical vapor deposition ͑CVD͒ using a single molecular precursor of 1,3-disilabutane ͑DSB͒ at various temperatures (600-1000°C) and pressures in the range of 1ϫ10 Ϫ6 -1ϫ10 Ϫ5 Torr. A single-crystalline cubic SiC thin film with stoichiometric composition can be obtained under deposition conditions of 900-1000°C and 4.0-6.5ϫ10 Ϫ6 Torr. However, on increasing the deposition pressure and decreasing the growth temperature to 1ϫ10 Ϫ5 Torr and 600°C, respectively, the film became polycrystalline. The effect of deposition pressure on the film growth rate and crystallinity was also studied. Based on the experimental results from x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy ͑SEM͒, transmission electron microscopy, and transmission electron diffraction, the best SiC film was grown at 900°C and 6.5 ϫ10 Ϫ6 Torr of DSB at a maximum growth rate of 0.1 m/h. The thicknesses of as-grown films were determined by cross-sectional SEM and Rutherford backscattering spectroscopy. Two different activation energies for cubic SiC film formation were obtained from Arrhenius plots. The deposition temperatures and pressures used in this study are lower by as much as 200°C and a factor of 10 2 , respectively, compared with those grown by conventional CVD methods.

Growth of Epitaxial 3C-SiC Films on Si(100) via Low Temperature SiC Buffer Layer

“…[6][7][8][9][10] Of particular relevance to this paper, the single precursor 1,3-disilabutane (DSB, CH 3 SiH 2 CH 2 SiH 3 ) has been shown in a high-vacuum chemical vapor deposition (CVD) system to yield epitaxial 3C-SiC on Si(100) substrate for deposition temperatures above 900 °C. 7 However, in low-pressure CVD reactors, which are preferable for large-scale production, DSB is found to suffer from high depletion rates along the reactor tube for deposition temperatures above 850 °C. 11 This is understood to be a consequence of the production of reactive species with high sticking probabilities, which in turn result in nonuniform film growth.…”

“…The selection of DSB precursor for the growth of the buffer film is motivated by the fact that with this precursor, films grown above 900 °C have a nearly epitaxial relationship with the Si(100) substrate. 7 The thin SiC "buffer" film grown using DSB is shown to act as an adherent seed layer for the growth of a thicker SiC film using MTS. The results show that the crystallinity of the epitaxial film is preserved and enhanced in the presence of the buffer film, as a result of the inhibition of void defects and the improvement in film adhesion.…”

“…The large lattice mismatch (20%) and difference in thermal expansion coefficient (8%) make SiC heteroepitaxy on Si difficult . Several approaches have been developed. − Of particular relevance to this paper, the single precursor 1,3-disilabutane (DSB, CH 3 SiH 2 CH 2 SiH 3 ) has been shown in a high-vacuum chemical vapor deposition (CVD) system to yield epitaxial 3C-SiC on Si(100) substrate for deposition temperatures above 900 °C . However, in low-pressure CVD reactors, which are preferable for large-scale production, DSB is found to suffer from high depletion rates along the reactor tube for deposition temperatures above 850 °C .…”

Growth and effect of deposition pressure on microstructure and electrical properties of 3C-SiC thin films deposited using methyltrichlorosilane single precursor

“…These results reveled that the microstructure properties is more sensitive to the deposition pressure variations and are good in case of film deposited with 2.5 mbar. Hence the growing temperature and pressure are main parameters influencing both film crystallinity and deposition rate [20].…”

Ion beam synthesis of SiC thin films

“…The growth of epitaxial SiC films on silicon substrates has been reported with high substrate temperatures greater than 1000 K [3][4][5][6][7][8][9][10][11][12][13][14]. The epitaxial SiC films on silicon substrates have been grown using chemical vapor deposition at 1023-1623 K [3][4][5][6][7][8][9].…”