Kinetics of Ge growth at low temperature on Si (001) by ultrahigh vacuum chemical vapor deposition J. Appl. Phys. 97, 064907 (2005); 10.1063/1.1854723 Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor: Study of their structural properties Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition J. Appl. Phys. 95, 7908 (2004); 10.1063/1.1728311Epitaxial growth of cubic SiC thin films on silicon using single molecular precursors by metalorganic chemical vapor depositionWe have deposited cubic SiC thin films on Si͑001͒ substrates by high vacuum chemical vapor deposition ͑CVD͒ using a single molecular precursor of 1,3-disilabutane ͑DSB͒ at various temperatures (600-1000°C) and pressures in the range of 1ϫ10 Ϫ6 -1ϫ10 Ϫ5 Torr. A single-crystalline cubic SiC thin film with stoichiometric composition can be obtained under deposition conditions of 900-1000°C and 4.0-6.5ϫ10 Ϫ6 Torr. However, on increasing the deposition pressure and decreasing the growth temperature to 1ϫ10 Ϫ5 Torr and 600°C, respectively, the film became polycrystalline. The effect of deposition pressure on the film growth rate and crystallinity was also studied. Based on the experimental results from x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy ͑SEM͒, transmission electron microscopy, and transmission electron diffraction, the best SiC film was grown at 900°C and 6.5 ϫ10 Ϫ6 Torr of DSB at a maximum growth rate of 0.1 m/h. The thicknesses of as-grown films were determined by cross-sectional SEM and Rutherford backscattering spectroscopy. Two different activation energies for cubic SiC film formation were obtained from Arrhenius plots. The deposition temperatures and pressures used in this study are lower by as much as 200°C and a factor of 10 2 , respectively, compared with those grown by conventional CVD methods.