Growth of CuInSe2 by metallorganic chemical vapour deposition (MOCVD): new copper precursor

Duchemin, S.; Artaud, M.C.; Ouchen, Fahima; Bougnot, J.; Pougnet, A.M.

doi:10.1007/bf00133116

Cited by 7 publications

(1 citation statement)

References 16 publications

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“…A plasma-enhanced CVD has also been reported for fabricating stoichiometric CIS film [168]. CIS thin film has also been deposited by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) [169,170]. Brien et al [171][172][173] have deposited CuInSe 2 , CuInS 2 and CuGaSe 2 thin film by low pressure MOCVD.…”

Section: Alternative Cis or Cigs Growth Processmentioning

confidence: 99%

Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells

Singh

Patra

2010

International Journal of Photoenergy

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For some time, the chalcopyrite semiconductor CuInSe2and its alloy with Ga and/or S [Cu(InGa)Se2or Cu(InGa)(Se,S)2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide) substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

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