Growth of double doped semi-insulating indium phosphide single crystals

Toudic, Y.; Coquillé, R.; Gauneau, M.; Grandpierre, G.; Maréchal, L.; Lambert, B.

doi:10.1016/0022-0248(87)90005-4

Cited by 19 publications

(7 citation statements)

References 9 publications

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“…The binding energy of Ti represents its energy level below the conduction band. The energy 0.51 eV of Ti in SI InP co-doped with Ti and Zn determined from our measurements is a little smaller than the published value 0.53 eV [6]. However, there is rather large spread of values reported by different authors, from 0.62 eV [3] to the value 0.50 eV [7] determined from photoconductivity measurements.…”

Section: Discussioncontrasting

confidence: 74%

“…3 is similar as that of Fe (0.65 eV) [4] but its hole capture cross section is substantially smaller than that of Fe [5]. The activation energy of Ti measured on different samples prepared in different laboratories is rather different [3,[6][7][8], probably because conditions of preparing crystals were slightly different. Titanium acts as a deep donor in InP, therefore SI InP can be prepared only by codoping with Ti and a suitable acceptor in sufficient concentration for full compensation of residual donor impurities.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of semi‐insulating InP co‐doped with Ti and various acceptors for use in X‐ray detection

Žďánský¹,

Pekárek

Gorodynskyy

et al. 2005

Cryst. Res. Technol.

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Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection.

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Section: Discussioncontrasting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Investigation of semi‐insulating InP co‐doped with Ti and various acceptors for use in X‐ray detection

Žďánský¹,

Pekárek

Gorodynskyy

et al. 2005

Cryst. Res. Technol.

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“…In addition, co-doping positively affected the crystal growth of GaAs single crystals [83]. Moreover, effects of co-doping were established for InP [84][85][86][87][88], and this method was applied for fabricating related devices [89]. In the 1990s, studies on contamination-related effects of defect complexes and diffusion, such as the studies of Fe, copper (Cu), or hydrogen (H) in Si [90][91][92][93][94] or wide band-gap materials [95,96], had attracted significant attention.…”

Section: +mentioning

confidence: 99%

A brief review of co-doping

et al. 2016

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Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.

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“…Another possibility is co-doping with TM donors and shallow acceptors. SI crystals of Cr-doped InP co-doped with Cd and Hg with resistivities up to 10 6 Ωcm were grown [8], however the thermal stability of Cr in InP is similar to that of Fe. SI crystals of Ti-doped InP co-doped with Hg [8], Be, Cd, Zn [9], and Mn [10] with resistivities about 10 6 Ωcm and very high thermal stability were presented.…”

Section: Introductionmentioning

confidence: 99%

Particle detectors based on semiconducting InP epitaxial layers

Yatskiv¹,

Grym²,

Žďánský

2011

J. Inst.

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A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n-and p-type conductivity with carrier concentration on the order of 10 14 cm −3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241 Am source at room temperature.

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Growth of double doped semi-insulating indium phosphide single crystals

Cited by 19 publications

References 9 publications

Investigation of semi‐insulating InP co‐doped with Ti and various acceptors for use in X‐ray detection

Investigation of semi‐insulating InP co‐doped with Ti and various acceptors for use in X‐ray detection

A brief review of co-doping

Particle detectors based on semiconducting InP epitaxial layers

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