Growth of epitaxial Bi-films on vicinal Si(111)

Lükermann, Daniel; Banyoudeh, S.; Brand, C.; Sologub, S.V.; Pfnür, H.; Tegenkamp, Christoph

doi:10.1016/j.susc.2013.10.024

Cited by 15 publications

(9 citation statements)

References 29 publications

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“…This choice of substrate is also very beneficial for practical applications, as the interface between film and insulating substrate, expected to reveal topological states, will also be protected from influencing oxidation effects arising from ambient exposure in technological applications [19]. The growth of Bi has been extensively studied on Si(111) [20][21][22][23][24][25][26][27][28][29] and HOPG [13,[30][31][32] as well as other surfaces [3,4,12,[33][34][35][36][37][38], resulting in fabrication of films with a range of different morphologies, orientations, and strain. The fabrication of Bi films has attracted considerable interest in recent years, as their controlled growth, with focus on morphology and crystallographic orientation, on semiconductor and oxide surfaces is not a trivial task.…”

Section: Introductionmentioning

confidence: 99%

Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

et al. 2017

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Section: Introductionmentioning

confidence: 99%

Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

et al. 2017

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“…Such that bulk Bi crystal has a (111) cleave plane and epitaxial Bi(111) thin films grow in BL mode. Epitaxial Bi thin film was grown on several substrates and exhibited a Bi(110) to Bi(111) transition growth behavior. − Similarly, Bi forms 2 BLs Bi(110) first on NbSe 2 and then Bi(111) BL films grown above. Figure c shows an STM image of Bi on NbSe 2 after the transition thickness.…”

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confidence: 99%

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

et al. 2017

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Ultrathin freestanding bismuth film is theoretically predicted to be one kind of two-dimensional topological insulators. Experimentally, the topological nature of bismuth strongly depends on the situations of the Bi films. Film thickness and interaction with the substrate often change the topological properties of Bi films. Using angle-resolved photoemission spectroscopy, scanning tunneling microscopy or spectroscopy and first-principle calculation, the properties of Bi(111) ultrathin film grown on the NbSe superconducting substrate have been studied. We find the band structures of the ultrathin film is quasi-freestanding, and one-dimensional edge state exists on Bi(111) film as thin as three bilayers. Superconductivity is also detected on different layers of the film and the pairing potential exhibits an exponential decay with the layer thicknesses. Thus, the topological edge state can coexist with superconductivity, which makes the system a promising platform for exploring Majorana Fermions.

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“…Coatings 2021, 11, x FOR PEER REVIEW 2 of 10 structures and their magnetotransport properties is expanding fast [18][19][20][21][22]. Bi films can be fabricated by various techniques such as liquid-based exfoliation [23,24], molecular beam epitaxy [25], and acid intercalated exfoliation [26]. However, many properties of these films such as morphology, details of crystal structure, and electrical properties are so far not well known.…”

Section: Methodsmentioning

confidence: 99%

“…These properties make bismuth a good candidate for the use in sensors, and the literature devoted to the fabrication of low dimensional Bi structures and their magnetotransport properties is expanding fast [18][19][20][21][22]. Bi films can be fabricated by various techniques such as liquid-based exfoliation [23,24], molecular beam epitaxy [25], and acid intercalated exfoliation [26].…”

Section: Introductionmentioning

confidence: 99%

Magnetotransport Properties of Semi-Metallic Bismuth Thin Films for Flexible Sensor Applications

et al. 2021

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In this paper we describe characterization of semi-metallic bismuth thin films. We prepared bismuth thin films by a deposition of bismuth through thermal evaporation onto flexible Kapton substrates and annealing at temperatures close to the melting point of Bi. We studied the morphology and transport properties of these films. Immediately after the deposition we observed competition between vanishing of the grain boundaries and elastic strain energy, which stabilized at larger thicknesses leading to the grain size of 140 nm. This effect was accompanied by a continuous decrease of resistivity which, however, was larger than for the bulk bismuth. The film annealing at temperatures close to the melting point of Bi led to a 300% increase of magnetoresistance at room temperature and in the magnetic field of 7 T. The in situ resistance measurements allowed us to determine the permissible temperature at which the annealing does not cause the loss of film continuity.

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Growth of epitaxial Bi-films on vicinal Si(111)

Cited by 15 publications

References 29 publications

Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

Controlling the growth of Bi(110) and Bi(111) films on an insulating substrate

Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Magnetotransport Properties of Semi-Metallic Bismuth Thin Films for Flexible Sensor Applications

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