Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

Growth of GaN on a‐plane sapphire: in‐plane epitaxial relationships and lattice parameters

“…In particular, the epitaxial relationships between the substrate and the films are of importance for the knowledge of the specific epitaxy rules that can allow a controllable and optimised growth of device structures. Although there are several reports on this subject [2][3][4][5][6], the results scatter and an explanation for the observed difference is still missing. On the other hand it is clear that the different lattice matches between the layer and substrate will contribute to the strain anisotropy, and although it is a well known phenomenon in GaN films grown on a-sapphire (mainly because of the different thermal coefficients in c-and a-directions of sapphire) its effect on the in-plane lattice parameters is not studied yet.…”

Hydride vapor phase epitaxy of GaN boules using high growth rates

“…V-pits in GaN layers are often discussed as a consequence of singular distortions on the growing surface like particles and Ga-droplets [24], impurity incorporation [25,26], and nanopipes or screw dislocations [11]. In homoepitaxial growth of GaAs [27,28], the formation of pits has been observed to also strongly depend on growth conditions.…”

“…Growth interruptions may lead to the formation of Ga-droplets on the growth surface as often observed after cool-down. Ga-droplets were identified as a reason for V-pit formation [24] making uninterrupted growth highly desirable.…”

Gallium nitride (GaN) on sapphire substrates for visible LEDs

“…The rough surfaces had whiskers, which are essentially the same as the nanorods used in contemporary nanotechnology. Wickenden et al (1971) also described the epitaxial growth of GaN on both sapphire and SiC substrates using both hydride VPE and trichloride VPE. In particular, this study compared the growth of GaN on sapphire substrates with various orientations including (0001), (10 1 0) and (11 2 0), which is a similar approach to the current non-polar and semipolar growth of GaN.…”