Growth of Epitaxial Nanowires at the Junctions of Nanowalls

Ng, Hou T.; Li, Jun; Smith, Micholas Dean; Nguyẽ̂n, Phó̂; Cassell, Alan M.; Han, Jie; Meyyappan, M.

doi:10.1126/science.1082542

Cited by 396 publications

(264 citation statements)

References 3 publications

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“…Indeed, a considerably higher temperature is needed in order for gold to act as a catalyst. 16,17 The electrodeposition was carried out on the In 2 O 3 -coated PET substrate, acting as the working electrode, in a glass cell immersed in a water bath held at 70°C, with the Ag/AgCl electrode and Pt wire serving as the reference and counter electrodes, respectively. Electrolyte solutions of 0.001 and 0.1 M Zn(NO) 3 ‚6H 2 O, mixed with a 0.1 M KCl supporting electrolyte, were used to obtain ZnO nanopillars and nanowalls, respectively.…”

Section: Methodsmentioning

confidence: 99%

One-Dimensional and Two-Dimensional ZnO Nanostructured Materials on a Plastic Substrate and Their Field Emission Properties

et al. 2008

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One-dimensional ZnO nanopillars of diameter 80-120 nm and two-dimensional nanowalls of thickness 100-300 nm are electrochemically grown at 70°C on a flexible polyester substrate. The low turn-on electric fields measured at a current density of 1 µA/cm 2 for nanopillars (1.2 V/µm) and nanowalls (2.2 V/µm) illustrate their superior field emission properties to most of the reported ZnO nanostructures. The present method of direct electrodeposition of ZnO on plastic without the need of template or catalyst offers a low-cost technique for fabricating field emission devices on flexible substrates for large-area display and other technologies.

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Section: Methodsmentioning

confidence: 99%

One-Dimensional and Two-Dimensional ZnO Nanostructured Materials on a Plastic Substrate and Their Field Emission Properties

et al. 2008

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“…10,11 To obtain vertically aligned 1D ZnO nanowire arrays directly on substrates, we used a well-established method involving a combination of carbothermal reduction and gold (Au) catalyst-mediated heteroepitaxial growth approach. 12 Briefly, the feedstock source consists of a mixture (1:1 by weight) of zinc oxide (purity 99.99%) and graphite powder (purity 99.99%). The substrate was placed downstream (∼1-3 cm) from the feedstock source in a quartz boat, which was placed in a horizontal tube furnace while a constant flow of argon gas (30 sccm, purity 99.999%) was maintained.…”

Section: Introductionmentioning

confidence: 99%

Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

et al. 2004

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Harnessing the potential of single crystal inorganic nanowires for practical advanced nanoscale applications requires not only reproducible synthesis of highly regular one-dimensional (1D) nanowire arrays directly on device platforms but also elegant device integration which retains structural integrity of the nanowires while significantly reducing or eliminating complex critical processing steps. Here we demonstrate a unique, direct, and bottom-up integration of a semiconductor 1D nanowire, using zinc oxide (ZnO) as an example, to obtain a vertical surround-gate field-effect transistor (VSG-FET). The vertical device structure and bottom-up integration reduce process complexity, compared to conventional top-down approaches. More significantly, scaling of the vertical channel length is lithographically independent and decoupled from the device packing density. A bottom electrical contact to the nanowire is uniquely provided by a heavily doped underlying lattice-match substrate. Based on the nanowire-integrated platform, both n-and p-channel VSG-FETs are fabricated. The vertical device architecture has the potential for use in tera-level ultrahigh-density nanoscale memory and logic devices.As device dimensions continue to shrink into the nanometer length scale regime, fundamental physical limits and economics are likely to hinder further scaling according to Moore's law.1 New strategies including usage of new materials, innovative device architectures, and smart integration schemes are needed to extend the current capabilities beyond the end of the technology roadmap time frame. 2 "Bottom-up" approaches to nanoelectronics that utilize functional electronic nanostructures, 3-5 in particular 1D semiconductor nanowires, have the potential to stretch beyond the limits of traditional top-down manufacturing. However, the usual pick-and-place approaches of manipulating and aligning horizontally lying nanowires to fabricate prototype devices and the stringent lithography requirements have to be overcome before practical realization of integrated nanosystems. Furthermore, lithographic issues become paramount in further scaling of these nanowire-based planar devices, especially in defining ultra-small channel length in field-effect transistors (FETs).A proposed solution to these problems is to grow single crystal 1D nanowires directly on a device substrate with the major nanowire growth axis orthogonal to the substrate plane and to use this nanowire-integrated platform for direct device fabrication. Based upon this vertical generic configuration, an ensemble of nanoscale devices can be realized 6,7 ( Figure S1, Supporting Information). In the present work, we demonstrate the potential of this approach through the realization of a vertical surround-gate field-effect transistor (VSG-FET), which takes advantage of the vertical dimension unlike planar nanowire-based FETs and traditional metaloxide-semiconductor (MOS) FETs. The advantages of this vertical device configuration and enhanced device performance have been ad...

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“…A number of nanometer and micrometer ZnO materials of varied geometries have been produced, e.g. nanowires, nanosprings, nanoneedles, nanowalls, coaxial cables, tubes, tetrapods and sheets [4][5][6][7][8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Growth mechanism and characterization of zinc oxide microcages

Fan

Scholz

Kolb

et al. 2004

Solid State Communications

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We report the growth mechanism and structural properties of micrometer sized ZnO cages which were synthesized directly from Zn vapor deposition and oxidation. The ZnO microcages exhibit a hexagonal or spherical shape with partly or completely open surfaces and hollow interiors. The growth process of the microcages includes the deposition of Zn polyhedral particles, top face breaking of the Zn particles and Zn sublimation, and subsequent reaction to ZnO. By controlling the various growth stages, we obtained information on the growth mechanism of the ZnO cages, which appears to be different from a mechanism reported previously. The chemical composition and crystalline structure were studied using energy dispersive X-ray spectroscopy and transmission electron microscopy, respectively. The room-temperature photoluminescence spectrum indicates a large quantity of oxygen-vacancy related defects within the wall of the ZnO cages. q

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Growth of Epitaxial Nanowires at the Junctions of Nanowalls

Cited by 396 publications

References 3 publications

One-Dimensional and Two-Dimensional ZnO Nanostructured Materials on a Plastic Substrate and Their Field Emission Properties

One-Dimensional and Two-Dimensional ZnO Nanostructured Materials on a Plastic Substrate and Their Field Emission Properties

Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

Growth mechanism and characterization of zinc oxide microcages

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