Growth of Ga1−xInxSb alloy crystals by conventional Czochralski pulling

Forced convection induced thermal fluctuations at the solid–liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga1−xInxSb bulk crystals

“…The primary reason is the poor crystalline quality of the bulk GaInSb substrates grown from high-temperature melts. A large gap between solidus and liquidus curves in the pseudo-binary GaSb-InSb phase diagram causes the crystal growth to be susceptible to segregation and constitutional supercooling [1,9] mechanical properties of the crystals are not suitable for any application. In fact, mechanical cracking has been always observed in the crystal containing more than 3-5 mol% of InSb [9].…”

“…A large gap between solidus and liquidus curves in the pseudo-binary GaSb-InSb phase diagram causes the crystal growth to be susceptible to segregation and constitutional supercooling [1,9] mechanical properties of the crystals are not suitable for any application. In fact, mechanical cracking has been always observed in the crystal containing more than 3-5 mol% of InSb [9]. Unlike, II-VI compounds, postgrowth annealing process is not effective in eliminating the crack density due to low solid-state elemental diffusion constants in III-V compounds [5].…”

Czochralski growth of Ga1−In Sb single crystals with uniform compositions

“…It consisted of a fused silica tube 47 mm ID as the chamber, a Kanthal wire wound around a fused silica tube as the resistance heater around the chamber, and a gold-coated fused silica tube as the radiation shield around the heater. This furnace was used previously for conventional Czochralski growth of Ga 1Àx In x Sb crystals [6].…”

“…Ga 1Àx In x Sb crystals have been grown by the conventional Czochralski process by Averous et al [2], Micklethwaite et al [3], Bachmann et al [4], Bonner [5] and Tsaur and Kou [6]. Tsaur and Kou [6] showed that severe segregation can develop along Ga 1Àx In x Sb crystals.…”

“…Tsaur and Kou [6] showed that severe segregation can develop along Ga 1Àx In x Sb crystals. For example, the InSb content increased from 6 mol% at the starting end of a single crystal to 23 mol% at the finishing end.…”