Growth of GaN by MOCVD on Rare Earth Oxide on Si(111)

Abstract

Growth of GaN on rare earth oxide (REO) buffers grown on silicon (111) was performed. A novel low temperature buffer layer was developed in order to suppress the decomposition of the REO buffer under hydrogen flow during MOCVD. GaN films, grown by this technique, exhibit smooth surface morphologies. XRD studies reveal the formation of an ErN layer during growth. 10.1149/05804.0455ecst ©The Electrochemical Society ECS Transactions, 58 (4) 455-461 (2013) 455 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-06-10 to IP

GaN growth on Si with rare-earth oxide distributed Bragg reflector structures

“…Recent advances in the fabrication of rare-earth oxide/silicon distributed Bragg reflectors (DBR) have opened up their potential applications in III-N-based light-emitting devices as reflecting substrates [5]. These investigations have demonstrated the excellent chemical and structural stability of these reflectors in typical III-N molecular beam epitaxy (MBE) process conditions [3,6]. The good thermal stability of erbium oxide/silicon structures at high temperatures has also been confirmed.…”

“…The rare-earth oxides Gd 2 O 3 , Er 2 O 3 may be an alternative choice in these layers. The excellent dielectric properties, reasonable thermal conductivity, and large differences in the refractive indices between Si and rare-earth oxides suggest their possible application as electric field suppression layers and high reflectance heterostructures [3,4]. Recent advances in the fabrication of rare-earth oxide/silicon distributed Bragg reflectors (DBR) have opened up their potential applications in III-N-based light-emitting devices as reflecting substrates [5].…”

Study of thermal stability of distributed Bragg reflectors based on epitaxial rare-earth oxide and silicon heterostructures

“…Recently, some results of MOCVD growth of GaN on Gd 2 O 3 and Er 2 O 3 double layer were published, proving compatibility of the rare-earth oxides as a buffer. 11 However, thermal stability of the multilayer oxide/silicon heterostructure can be influenced by additional defects like twinning lamellae in Si layers that occur a) Electronic mail: dargis@translucentinc.com during coalescence of twinned silicon islands which are formed because of higher surface energy of silicon compared to that of the oxide. [12][13][14] Although the defects of this type tend to annihilate during growth of thick (hundreds of nanometers) Si or Ge layers because of their high energy, 15 in thinner layers (less than 100 nm, which are typical for DBR structure), they may reach silicon surface and transfer into a subsequently grown oxide layers.…”

Engineering of the Interface between Silicon and Rare-Earth-Oxide Buffer for GaN Growth

“…Efforts to mitigate strain in III-N semiconductor layers grown on Si(111) and to prevent excessive bow of the wafers and even cracking of the layers have led to the introduction of a variety of materials as the buffer between the layer and the substrate. Growth of GaN on rare-earth oxides (REO) and strain reduction in the heterostructures has already been demonstrated [1,2]. Among these, erbium oxide with superior kinetic and thermal stability at typical III-N metal organic chemical vapor deposition process temperatures is of particular interest.…”