Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

Grzegory, I.; Boćkowski, Michał; Łucznik, B.; Weyher, J.L.; Litwin‐Staszewska, E.; Konczewicz, Leszek; Sadovyi, B.; Nowakowski, Piotr; Porowski, S.

doi:10.1016/j.jcrysgro.2011.12.021

Cited by 14 publications

(17 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…GaN:Mg single crystals were grown by HNPS method in spontaneous [2] and "feed-seed" [6] configurations. Growth was carried out from the solution of nitrogen in liquid gallium with 0.1-0.5% magnesium doping under high pressure (1 GPa).…”

Section: Methodsmentioning

confidence: 99%

High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

et al. 2016

Self Cite

View full text Add to dashboard Cite

Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [1011], and [1011]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.

show abstract

Section: Methodsmentioning

confidence: 99%

High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

et al. 2016

Self Cite

View full text Add to dashboard Cite

show abstract

“…Then, the following HVPE growth conditions are applied: the growth temperature of about 1318 K, the temperature of GaCl synthesis of 1143 K, the HCl flow of the level of 24 ml/min diluted in 500 ml/min of H 2 , the NH 3 flow of 480 ml/min diluted in H 2 , and 2700 ml/min of H 2 as the carrier gas. Recently, the multi-feed-seed (MFS) configuration in the HNPS growth method has been proposed and strongly developed [17][18][19][20][21][22] . This configuration is based on the conversion of free-standing HVPE-GaN crystals to free-standing, pressure grown HNPS-GaN of a much higher quality than the seeds.…”

Section: Methodsmentioning

confidence: 99%

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

Boćkowski

2014

SPIE Proceedings

View full text Add to dashboard Cite

The use of GaN crystals grown by three methods (and their combinations): Hydride Vapor Phase Epitaxy (HVPE), high nitrogen pressure solution (HNPS) and ammonothermal method for optoelectronic (laser diodes) and electronic (transistors) devices is presented. After a brief review on the development of the three crystallization methods, the GaN crystals' uniform and unique properties, which allow to use them as substrates for building devices, are shown. The Metal Organic Vapor Phase Epitaxy (MOCVD) and Molecular Beam Epitaxy (MBE) technologies for growing the nitride quantum nanostructures as well as the structures' properties and processing of devices are demonstrated. Future challenges and perspectives for application of bulk GaN as substrates in building quantum nanostructures for some electronic and optoelectronic devices are discussed.

show abstract

“…Recently, the MFS configuration in the HNPS growth method has been proposed and developed [31][32][33][34][35][36]. This configuration is based on the conversion of free-standing HVPE-GaN crystals to free-standing, pressure-grown HNPS-GaN of a much higher quality than the seeds.…”

Section: Lpe Growth: the Multifeed Seed Configurationmentioning

confidence: 99%

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

Ehrentraut

Boćkowski

2015

Handbook of Crystal Growth

View full text Add to dashboard Cite

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

Cited by 14 publications

References 14 publications

High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals

Contact Info

Product

Resources

About