Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy

Abstract

In this paper, the GaN poly crystal was grown by hydride vapor phase epitaxy at 1090 C on the metallic compound graphite substrate with good heat dissipation. The coefficient of thermal expansion of the metallic compound graphite substrate is 6.2 m/(mÁK). The heat conductivity is 150 W/(mÁK), and specific gravity is 3.1. The metallic compound graphite substrate was gained higher thermal conductivity more than the sapphire substrate through by injecting the nonferrous metal in the porosity carbon graphite base. The GaN poly crystal grown along the [0001] c-axis by hydride vapor phase epitaxy was observed on the metallic compound graphite substrate through the scanning electron microscope and energy dispersive spectroscopy. And electrical characteristic of substrate with each different condition was investigated by Hall Effect measurement. #