The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and NH 3 gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at 850 o C and 1090 o C, respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement. 8월 29일 접수) (2013년 9월 17일 심사완료) (2013년 9월 27일 게재확정) 요 약 GaN는 대표적인 III-V족 질화물반도체로 주로 값싸고 다루기 쉬운 사파이어 기판 위에 성장된다. 하지만 사파 이어 기판은 부도체이며, GaN과의 격자부정합을 일으키고 열전도도 또한 낮은 기판으로 알려져 있다. 본 논문에서는 방열 기능과 열·전기전도도가 뛰어난 금속 화합물 탄소체 기판 위에 poly GaN epilayer를 HVPE법으로 성장시켜보았다. 비정질 의 금속 화합물 탄소체 기판위에 성장되는 GaN epilayer의 성장메카니즘을 관찰하였다. GaN epilayer의 성장을 위해 HCl과 NH 3 를 흘려주었다. 성장하기 위해 source zone과 growth zone의 온도는 각각 850 o C와 1090 o C로 설정했다. 성장이 끝난 샘 플은 SEM, EDS, XRD측정을 통해 분석하였다. †

In this paper, the GaN poly crystal was grown by hydride vapor phase epitaxy at 1090 C on the metallic compound graphite substrate with good heat dissipation. The coefficient of thermal expansion of the metallic compound graphite substrate is 6.2 m/(mÁK). The heat conductivity is 150 W/(mÁK), and specific gravity is 3.1. The metallic compound graphite substrate was gained higher thermal conductivity more than the sapphire substrate through by injecting the nonferrous metal in the porosity carbon graphite base. The GaN poly crystal grown along the [0001] c-axis by hydride vapor phase epitaxy was observed on the metallic compound graphite substrate through the scanning electron microscope and energy dispersive spectroscopy. And electrical characteristic of substrate with each different condition was investigated by Hall Effect measurement. #