Growth of Ge and P codoped p ‐type CuInS₂ bulk crystals

Abstract

Codoping of Ge and P into CuInS2 was carried out in order to grow p ‐type CuInS2 bulk crystals reproducibly in the S‐poor alloy composition region. The codoping condition for p ‐type crystal growth was made clear for the growth temperatures of 850 and 900 °C. The electrical and photoluminescence properties of codoped p ‐type crystals were also studied. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)